Heat generation sheet and method of fabricating the same

1. A heat generation sheet comprising:

a base comprising first and second sides;

a heat generation layer which is formed in at least one region of the first side of the base and in which a plurality of conductive nanoparticles comprising at least one of oxide semiconductor material doped with dopant and silica are physically connected;

a protective layer protecting the heat generation layer; and

an electric feeding part supplying power to the heat generation layer.

2. The heat generation sheet of claim 1 , wherein the oxide semiconductor material comprises at least one oxide selected from the group consisting of ZnO, SnO, MgO, and Ino.

3. The heat generation sheet of claim 2 , wherein the dopant comprises at least one selected from the group consisting of In, Sb, Al, Ga, C, and Sn.

4. The heat generation sheet of claim 1 , wherein the heat generation layer comprises a multi-layer structure comprising a plurality of unit layers.

5. The heat generation sheet of claim 1 , wherein the heat generation layer is formed in at least one region of a plurality of regions defined in the first side of the base.

6. The heat generation sheet of claim 1 , further comprising an adhesive force reinforcement layer interposed between the heat generation layer and the base.

7. The heat generation sheet of claim 6 , wherein the adhesive force reinforcement layer comprises a plurality of nanoparticles connected.

8. A heat generation sheet comprising:

a base comprising first and second sides;

a heat generation layer which is formed in at least one region of the first side of the base and in which a plurality of conductive nanoparticles comprising at least one of oxide semiconductor material doped with dopant and silica are physically connected;

a protective layer protecting the heat generation layer; and

an electric feeding part supplying power to the heat generation layer,

wherein the heat generation layer comprises a plurality of unit heat generation layers formed using different types of nanoparticles.

9. A method of fabricating a heat generation sheet, the method comprising:

coating a dispersion solution in which nanoparticles comprising at least one of oxide semiconductor material doped with dopant and silica are dispersed on a solvent, on a first side of a base comprising first and second sides;

forming a nanoparticle layer on the first side of the base by removing the solvent of the dispersion solution;

forming a heat generation layer by heat treating the nanoparticle layer until the nanoparticles are physically connected; and

forming a protective layer protecting the heat generation layer.

10. The method of claim 9 , wherein the heat generation layer is formed in a multi-layer structure by repeatedly performing the coating of the dispersion solution, the forming of the nanoparticle layer by removing the solvent of the dispersion solution, and the forming of the heat generation layer by heat treating the nanoparticle layer a plurality of times.

11. The method of claim 10 , before the forming of the nanoparticle layer, further comprising forming an adhesive force reinforcement layer reinforcing an adhesive force of the heat generation layer with respect to the base.

12. The method of claim 11 , wherein the forming of the adhesive force reinforcement layer comprises:

coating the dispersion solution in which the nanoparticles are dispersed on the solvent, on the base; and

drying the solvent and heat treating the nanoparticles.

13. The method of claim 9 , before the forming of the nanoparticle layer, further comprising forming an adhesive force reinforcement layer reinforcing an adhesive force of the heat generation layer with respect to the base.

14. The method of claim 13 , wherein the forming of the adhesive force reinforcement layer comprises:

coating the dispersion solution in which the nanoparticles are dispersed on the solvent, on the base; and

drying the solvent and heat treating the nanoparticles.

15. The method of claim 9 , wherein the oxide semiconductor material comprises at least one oxide selected from the group consisting of ZnO, SnO, MgO, and InO.

16. The method of claim 9 ,wherein the dopant comprises at least one selected from the group consisting of In, Sb, Al, Ga, C, and Sn.