Electrostatic chuck device
An electrostatic chuck device which enables to perform a plasma process having high in-plane uniformity to a plane-like sample by improving the in-plane uniformity of the electric field intensity in a plasma when applied to a plasma processing apparatus. Specifically disclosed is an electrostatic chuck device ( 21 ) including an electrostatic chuck section ( 22 ), a metal base section ( 23 ) serving as a high-frequency generating electrode, and an insulating plate ( 24 ). The electrostatic chuck section ( 22 ) is composed of a dielectric plate ( 31 ) whose top surface ( 31 a ) serves as a mounting surface on which a plate-like sample (W) is placed, a supporting plate ( 32 ), an electrostatic-adsorption inner electrode ( 25 ), and an insulating layer ( 33 ). The electrostatic-adsorption inner electrode ( 25 ) is made of a composite sintered body containing an insulating ceramic and silicon carbide, while having a volumetric resistance of not less than 1.0×10 −1 Ωcm but not more than 1.0×10 8 Ωcm.
1. An electrostatic chuck device comprising:
an electrostatic chuck section that comprises a substrate having a first surface and a second surface opposite the first surface, the first surface being a mounting surface on which a plate-like sample is mounted and has an electrostatic-adsorption inner electrode built therein, and a power supply terminal that applies a direct current voltage to the electrostatic-adsorption inner electrode; and
a metal base that is fixed so as to be integrated with the second surface of the substrate of the electrostatic chuck section;
wherein the electrostatic-adsorption inner electrode comprises a complex sintered body containing insulating ceramics and silicon carbide, and the volumetric resistance thereof is equal to or greater than 1.0×10 2 Ωcm and less than 1.0×10 4 Ωcm.
2. An electrostatic chuck device according to claim 1 , wherein the complex sintered body contains silicon carbide from 5 wt % to 20 wt %.
3. An electrostatic chuck device according to claim 1 , wherein the complex sintered body contains one or more species selected from a group consisting of metals, carbon, and conducting ceramics at a total of 30 vol % or less.
4. An electrostatic chuck device according to claim 1 , further comprising a dielectric material positioned at least partially between the metal base and the second surface of the electrostatic chuck section.
5. An electrostatic chuck device according to claim 4 , further comprising a substantially non-conductive adhesive material at least positioned between the dielectric material and the metal base.
6. An electrostatic chuck device according to claim 4 wherein the dielectric material extends over substantially the entire area between the metal base and the second surface of the electrostatic chuck section.
7. An electrostatic chuck device according to claim 6 wherein the dielectric material is at least partially embedded in the metal base.
8. An electrostatic chuck device comprising:
an electrostatic chuck section that comprises a substrate having a first surface and a second surface opposite the first surface, the first surface being a mounting surface on which a plate-like sample is mounted and has an electrostatic-adsorption inner electrode built therein, and a power supply terminal that applies a direct current voltage to the electrostatic-adsorption inner electrode;
a metal base that is fixed so as to be integrated with the second surface of the substrate of the electrostatic chuck section; and
a dielectric material positioned at least partially between the metal base and second surface of the electrostatic chuck section;
wherein the electrostatic-adsorption inner electrode comprises a complex sintered body containing insulating ceramics and silicon carbide, and the volumetric resistance thereof is equal to or greater than 1.0×10 2 Ωcm and less than 1.0×10 4 Ωcm.
9. An electrostatic chuck device according to claim 8 , further comprising a substantially non-conductive adhesive material at least positioned between the dielectric material and the metal base.
10. An electrostatic chuck device according to claim 8 wherein the dielectric material extends over substantially the entire area between the metal base and the second surface of the electrostatic chuck section.
11. An electrostatic chuck device according to claim 10 wherein the dielectric material is at least partially embedded in the metal base.