Systems and methods for forming defects on graphitic materials and curing radiation-damaged graphitic materials

1. A method of forming defects on a graphitic material, comprising:

applying a radiation reactive material to at least a portion of a surface of said graphitic material,

irradiating said radiation reactive material to produce a reactive species therein, and

permitting said reactive species to react with at least said portion of said surface of said graphitic material to thereby form at least one defect therein,

wherein said radiation reactive material comprises a molecule selected from the group consisting of a diatomic halogen molecule, hydrogen silsesquioxane, poly(methyl methacrylate), and a peroxide compound.

2. The method of claim 1 , wherein said irradiating comprises electromagnetic radiation having a wavelength in the range of 200 to 1500 nm.

3. The method of claim 1 , wherein said irradiating comprises one or more electron beams.

4. The method of claim 1 , wherein said graphitic material comprises graphene.

5. The method of claim 1 , wherein said graphitic material comprises multiple layers of stacked graphene.

6. The method of claim 1 , wherein said radiation reactive material comprises a diatomic halogen molecule.

7. The method of claim 6 , wherein the diatomic halogen molecule is selected from the group consisting of fluorine, bromine, chlorine, and iodine.

8. The method of claim 1 , wherein said radiation reactive material comprises poly(methyl methacrylate).

9. The method of claim 1 , wherein said radiation reactive material comprises hydrogen silsesquioxane.

10. The method of claim 1 , wherein said radiation reactive material comprises a peroxide compound.

11. The method of claim 10 , wherein said peroxide compound comprises benzoyl peroxide.

12. The method of claim 1 , wherein said applying comprises applying by spin-coating.

13. The method of claim 1 , wherein said applying comprises applying a gas form by adsorption onto said surface of said graphitic material.

14. The method of claim 1 , wherein said reactive species comprises a radical.

15. A method of forming defects on a graphitic material, comprising:

applying a radiation reactive material to at least a portion of a surface of said graphitic material,

irradiating said radiation reactive material using one or more electron beams to produce a reactive species therein, and

permitting said reactive species to react with at least said portion of said surface of said graphitic material to thereby form at least one defect therein,

the method further comprising irradiating a second portion of said radiation reactive material so as to produce a plurality of defects on said surface of said graphitic material, the plurality of defects forming a geometric pattern, at least a section of which having a resolution of approximately 15 nm.

16. A device incorporating a hole-doped graphene comprising one or more areas having a first conductance and one or more areas having a second conductance, wherein the first conductance is lower than the second conductance.

17. The device of claim 16 , wherein said device is a field effect transistor.

18. The device of claim 17 , wherein said field effect transistor comprises a first electrode comprising a metal, a second electrode comprising a metal and separated from the first electrode, and a channel connecting the first electrode and the second electrode, the channel comprising said hole-doped graphene.

19. The device of claim 16 , wherein said one or more areas having said first conductance of said hole-doped graphene comprise one or defects formed by the method comprising:

applying a radiation reactive material to at least a portion of a surface of said graphene,

irradiating said radiation reactive material to produce a reactive species therein, and

permitting said reactive species to react with at least said portion of said surface of said graphene to thereby form at least one defect therein.