Semiconductor device and a method of manufacturing the same
View Patent ↗A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.
1. A thin film transistor comprising:
a base film over a substrate;
a semiconductor film on and in contact with the base film;
a gate insulating film on and in contact with the semiconductor film and the base film;
a gate electrode on and in contact with the gate insulating film; and
a source electrode and a drain electrode which are connected to the semiconductor film;
wherein a concentration of a contaminating impurity in an interface between the semiconductor film and the gate insulating film is 2×10 16 atoms/cm 3 or less, and
wherein a concentration of the contaminating impurity in an interface between the gate insulating film and the gate electrode is 2×10 16 atoms/cm 3 or less.
2. The thin film transistor according to claim 1 , wherein a concentration of the contaminating impurity in an interface between the base film and the gate insulating film is 2×10 16 atoms/cm 3 or less.
3. The thin film transistor according to claim 1 , wherein the contaminating impurity is at least one element selected from periodic table group 1 elements or periodic table group 2 elements.
4. The thin film transistor according to claim 1 , wherein the contaminating impurity element is at least one element selected from the group consisting of Na, K, Mg, Ca and Ba.
5. The thin film transistor according to claim 1 , wherein the base film comprises at least one of silicon oxide, silicon nitride and silicon oxynitride.
6. The thin film transistor according to claim 1 , wherein the gate insulating film comprises at least one of silicon oxide, silicon nitride and silicon oxynitride.
7. The thin film transistor according to claim 1 , wherein the semiconductor film is formed with a thickness of 10 to 100 nm.
8. The thin film transistor according to claim 1 , wherein the gate electrode comprises at least one selected from the group consisting of Ta, Ti, Mo, W, WMo, TaN and WSi.
9. The thin film transistor according to claim 1 , wherein the semiconductor film has crystallinity.
10. The thin film transistor according to claim 2 , wherein the interface between the base film and the gate insulating film contains fluorine.
11. The thin film transistor according to claim 9 , wherein an amount of hydrogen in the semiconductor film having crystallinity is 5 atom % or less.
12. The thin film transistor according to claim 9 , wherein the semiconductor film having crystallinity is formed with a thickness of 10 to 100 nm.
13. A thin film transistor comprising:
a base film over a substrate;
a gate electrode on and in contact with the base film;
a gate insulating film on and in contact with the base film and the gate electrode;
a semiconductor film on and in contact with the gate insulating film; and
a source electrode and a drain electrode which are connected to the semiconductor film,
wherein a concentration of a contaminating impurity in an interface between the gate electrode and the gate insulating film is 2×10 16 atoms/cm 3 or less, and
wherein a concentration of the contaminating impurity in an interface between the gate insulating film and the semiconductor film is 2×10 16 atoms/cm 3 or less.
14. The thin film transistor according to claim 13 , wherein a concentration of the contaminating impurity in an interface between the base film and the gate insulating film is 2×10 16 atoms/cm 3 or less.
15. The thin film transistor according to claim 13 , wherein the contaminating impurity is at least one element selected from periodic table group 1 elements or periodic table group 2 elements.
16. The thin film transistor according to claim 13 , wherein the contaminating impurity is at least one element selected from the group consisting of Na, K, Mg, Ca and Ba.
17. The thin film transistor according to claim 13 , wherein the base film comprises at least one of silicon oxide, silicon nitride and silicon oxynitride.
18. The thin film transistor according to claim 13 , wherein the gate insulating film comprises at least one of silicon oxide, silicon nitride and silicon oxynitride.
19. The thin film transistor according to claim 13 , wherein the semiconductor film is formed with a thickness of 10 to 100 nm.
20. The thin film transistor according to claim 13 , wherein the gate electrode comprises at least one selected from the group consisting of Ta, Ti, Mo, W, WMo, TaN and WSi.
21. The thin film transistor according to claim 13 , wherein the semiconductor film has crystallinity.
22. The thin film transistor according to claim 14 , wherein the interface between the base film and the gate insulating film contains fluorine.
23. The thin film transistor according to claim 21 , wherein an amount of hydrogen in the semiconductor film having crystallinity is 5 atom % or less.
24. The thin film transistor according to claim 21 , wherein the semiconductor film having crystallinity is formed with a thickness of 10 to 100 nm.