Method for manufacturing semiconductor device
View Patent ↗A formation of a gate electrode provided over an oxide semiconductor layer of a thin film transistor is performed together with a patterning of the oxide semiconductor layer.
1. A method for manufacturing a semiconductor device comprising:
forming a first conductive layer over an insulating surface;
performing a first patterning to form a first gate electrode;
forming a first insulating film over the first gate electrode;
forming a second conductive layer over the first insulating film;
performing a second patterning to form a wiring layer;
forming an oxide semiconductor film, a second insulating film, and a third conductive layer over the first insulating film and the wiring layer;
performing a third patterning to form an island-shaped oxide semiconductor film, an island-shaped second insulating film over the island-shaped oxide semiconductor film, and a second gate electrode over the island-shaped second insulating film;
forming an interlayer insulating layer covering the first insulating film, the wiring layer, the island-shaped oxide semiconductor film, the island-shaped second insulating film, and the second gate electrode;
performing a fourth patterning to form an opening portion reaching the second gate electrode and an opening portion reaching the wiring layer;
forming a conductive material over the interlayer insulating layer; and
performing a fifth patterning to form a lead wiring connected to the second gate electrode and a pixel electrode connected to the wiring layer.
2. A method for manufacturing a semiconductor device comprising:
forming a first conductive layer over an insulating surface;
performing a first patterning to form a first gate electrode;
forming a first insulating film over the first gate electrode;
forming a second conductive layer over the first insulating film;
performing second patterning to form a wiring layer;
forming an oxide semiconductor film, a channel protective film, a second insulating film, and a third conductive layer over the first insulating film and the wiring layer;
performing a third patterning to form an island-shaped oxide semiconductor film, an island-shaped channel protective film over the island-shaped oxide semiconductor film, an island-shaped second insulating film over the island-shaped channel protective film, and a second gate electrode over the island-shaped second insulating film;
forming an interlayer insulating layer covering the first insulating film, the wiring layer, the island-shaped oxide semiconductor film, the island-shaped channel protective film, the island-shaped second insulating film, and the second gate electrode;
performing a fourth patterning to form an opening portion reaching the second gate electrode and an opening portion reaching the wiring layer;
forming a conductive material over the interlayer insulating layer; and
performing a fifth patterning to form a lead wiring connected to the second gate electrode and a pixel electrode connected to the wiring layer.
3. The method for manufacturing a semiconductor device according to claim 1 or claim 2 ,
wherein the oxide semiconductor film is a first oxide semiconductor film,
wherein a second oxide semiconductor film is formed over the wiring layer by performing the second patterning, and
wherein a buffer layer formed from the second oxide semiconductor film is provided by performing the third patterning in a region where the oxide semiconductor film and the wiring layer overlap with each other.
4. The method for manufacturing a semiconductor device according to claim 1 or claim 2 ,
wherein the oxide semiconductor film is a first oxide semiconductor film, and
wherein a second oxide semiconductor film is formed below the wiring layer by performing the second patterning.
5. The method for manufacturing a semiconductor device according to claim 1 or claim 2 ,
wherein the lead wiring is provided to overlap with the second gate electrode.
6. The method for manufacturing a semiconductor device according to claim 1 or claim 2 ,
wherein the interlayer insulating layer is formed using polyimide.
7. The method for manufacturing a semiconductor device according to claim 2 ,
wherein the channel protective film is formed using amorphous silicon.
8. The method for manufacturing a semiconductor device according to claim 1 or claim 2 ,
wherein the oxide semiconductor film includes silicon oxide.
9. The method for manufacturing a semiconductor device according to claim 1 or claim 2 ,
wherein the lead wiring is formed to be connected to the first gate electrode.
10. The method for manufacturing a semiconductor device according to claim 1 or claim 2 ,
wherein the second insulating film is formed to a thickness of from 50 nm to 500 nm inclusive.