IP Library Granted Patent US 8,278,191
Granted Patent B2
US 8,278,191 · App. 12/751,080 · Granted Oct 2, 2012

Methods and systems for metal-assisted chemical etching of substrates

Assignee: Georgia Tech Research Corporation
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Quick Facts
Patent No.
US 8,278,191
App. No.
12/751,080
Granted
Oct 2, 2012
Kind
B2
Abstract

Disclosed herein are various embodiments related to metal-assisted chemical etching of substrates on the micron, sub-micron and nano scales. In one embodiment, among others, a method for metal-assisted chemical etching includes providing a substrate; depositing a non-spherical metal catalyst on a surface of the substrate; etching the substrate by exposing the non-spherical metal catalyst and the substrate to an etchant solution including a composition of a fluoride etchant and an oxidizing agent; and removing the etched substrate from the etchant solution.

Claims (35)

1. A method for metal-assisted chemical etching, comprising:

providing a substrate;

depositing a non-spherical metal catalyst on a surface of the substrate, the non-spherical metal catalyst including a first portion including a first metal deposited on the surface of the substrate and a second portion including a second material deposited on the surface of the substrate;

etching the substrate by exposing the non-spherical metal catalyst and the substrate to an etchant solution including a composition of a fluoride etchant and an oxidizing agent; and

removing the etched substrate from the etchant solution.

2. The method of claim 1 , wherein the substrate is a silicon substrate.

3. The method of claim 1 , wherein the metal is selected from the group consisting of gold, silver, platinum, and tungsten.

4. The method of claim 1 , wherein the fluoride etchant is hydrofluoric acid (HF) and the oxidizing agent is hydrogen peroxide (H 2 O 2 ).

5. The method of claim 1 , wherein the non-spherical metal catalyst is patterned on the surface of the substrate.

6. The method of claim 5 , wherein the patterned metal catalyst includes a grid comprising lines of the metal.

7. The method of claim 6 , wherein the grid includes at least one protrusion extending from a first side of the grid.

8. The method of claim 6 , wherein areas between the lines of the grid are filled with material.

9. The method of claim 5 , further comprising:

patterning a second non-spherical metal catalyst on a surface of the substrate; and

further etching the substrate by simultaneously exposing the first and second non-spherical metal catalysts and the substrate to a second etchant solution.

10. The method of claim 9 , where the second etchant solution has a composition that is the same as the first etchant solution.

11. A method for metal-assisted chemical etching, comprising:

providing a substrate;

depositing a non-spherical metal catalyst on a surface of the substrate;

etching the substrate by exposing the non-spherical metal catalyst and the substrate to an etchant solution including a composition of a fluoride etchant and an oxidizing agent;

applying a magnetic field to the metal catalyst to direct the etching path within the substrate; and

removing the etched substrate from the etchant solution.

12. The method of claim 11 , wherein the non-spherical metal catalyst is a nanoparticle positioned on the surface of the substrate.

13. The method of claim 12 , wherein the metal catalyst is a nanodonut.

14. The method of claim 11 , wherein the non-spherical metal catalyst is patterned on the surface of the substrate.

15. The method of claim 14 , wherein the patterned metal catalyst is a dog-bone shaped nanostructure.

16. A method for metal-assisted chemical etching, comprising:

providing a substrate;

depositing a non-spherical metal catalyst on a surface of the substrate, the non-spherical metal catalyst including at least one protrusion extending from a side of the non-spherical metal catalyst;

etching the substrate by exposing the non-spherical metal catalyst and the substrate to an etchant solution including a composition of a fluoride etchant and an oxidizing agent, the at least one protrusion producing rotational movement of the non-spherical metal catalyst through the substrate during exposure to the etchant solution; and

removing the etched substrate from the etchant solution.

17. The method of claim 16 , wherein the non-spherical metal catalyst is patterned on the surface of the substrate.

18. The method of claim 17 , wherein the patterned metal catalyst includes a grid.

19. The method of claim 17 , wherein the patterned metal catalyst is formed using a plurality of materials.

20. The method of claim 16 , wherein the non-spherical metal catalyst includes a plurality of protrusions extending from the side of the non-spherical metal catalyst.

Assignments (2)
CONFIRMATORY LICENSE Recorded Jan 3, 2011
From: GEORGIA TECH RESEARCH CORPORATION
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 025574/0047 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 23, 2010
From: HILDRETH, OWEN; WONG, C. P.; XIU, YONGHAO
To: GEORGIA TECH RESEACH CORPORATION
Reel/Frame 024869/0160 →
Continuity (2)
Provisional Application 61165265 · Mar 31, 2009
Related Publication 20100248449A1 · Sep 30, 2010