IP Library › Granted Patent US 8,278,963
Granted Patent B2
US 8,278,963 · App. 12/758,130 · Granted Oct 2, 2012

Power detector and method for detecting power

Assignee: SiGe Semiconductor Inc.
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Quick Facts
Patent No.
US 8,278,963
App. No.
12/758,130
Granted
Oct 2, 2012
Kind
B2
Abstract

A circuit and method are provided for detecting a power of a signal amplified in a power amplifier. A diode and a voltage bias source are used to shift a voltage of the signal taken at a base of an amplifying transistor of the power amplifier, to generate a positive signal. The positive signal is provided to a base input of an emitter follower exhibiting high input impedance to generate a power detector output which follows the positive signal.

Claims (35)

1. A method of detecting a power of a signal transmitted by a power amplifier, the method comprising:

receiving the signal at an input of a power detector, the input of the power detector coupled to one of a base and a gate, of an amplifying device in the power amplifier;

shifting a voltage of the signal positively by a magnitude of a peak voltage of the signal generating a positive signal;

providing the positive signal to a base input of an emitter follower generating a follower signal which follows the positive signal; and

providing the follower signal to an output of the power detector, and to a first capacitor coupled to ground;

wherein the emitter follower presents a high impedance at the input of the power detector.

2. A method according to claim 1 wherein the step of shifting the voltage of the signal comprises:

providing the signal across a capacitor to a cathode of a diode;

wherein the cathode of the diode is coupled to the base input of the emitter follower, and

wherein an anode of the diode is coupled to a voltage bias source.

3. A method according to claim 2 wherein the diode comprises a Schottky diode, wherein the voltage bias source comprises a temperature compensating voltage bias source, and wherein the emitter follower comprises a first transistor.

4. A method according to claim 3 wherein the first transistor comprises a BJT, wherein a collector of the BJT is coupled to a voltage supply, wherein the base input of the source-emitter follower is a base of the BJT, and wherein an emitter of the BJT is coupled to the output of the power detector and the first capacitor.

5. A method according to claim 4 further comprising:

biasing a second transistor coupled between the output of the detector and ground thereby providing operating current for the first transistor.

6. A method according to claim 4 further comprising:

biasing a second transistor coupled between the cathode of the Schottky diode and ground thereby boosting current passing through the Schottky diode.

7. A power detector circuit for detecting a power of a signal transmitted by a power amplifier, the power detector comprising:

an input for receiving the signal coupled to one of a base and a gate of an amplifying device of the power amplifier;

a voltage shifting circuit for shifting a voltage of the signal positively by a magnitude of a peak voltage of the signal and for generating a positive signal;

an emitter follower for receiving at a base input of the emitter follower the positive signal, and for generating a follower signal which follows the positive signal;

a first capacitor coupled to the source-emitter follower for receiving the follower signal, the first capacitor also coupled to ground; and

an output for providing the detector voltage output signal from a combination of a voltage of the capacitor and the follower signal,

wherein the emitter follower presents a high impedance at the input of the power detector.

8. A circuit according to claim 7 wherein the voltage shifting circuit comprises:

a capacitor coupled on a first side to the input of the power detector;

a diode, wherein a cathode of the diode is coupled to a second side of the capacitor and is coupled to the base input of the emitter follower, and

a voltage bias source coupled to an anode of the diode.

9. A circuit according to claim 8 wherein the diode comprises a Schottky diode, wherein the voltage bias source comprises a temperature compensating voltage bias source, and wherein the emitter follower comprises a first transistor.

10. A circuit according to claim 9 wherein the first transistor comprises a BJT, wherein a collector of the BJT is coupled to a voltage supply, and wherein an emitter of the BJT is coupled to the output of the power detector and the first capacitor.

11. A circuit according to claim 10 further comprising:

a second transistor coupled between the output of the detector and ground; and

a second voltage bias source coupled to a base of the second transistor providing operating current for the first transistor at the output of the power detector by appropriate biasing of the second transistor.

12. A circuit according to claim 10 further comprising:

a second transistor coupled between the cathode of the Schottky diode and ground; and

a second voltage bias source coupled to a base of the second transistor for boosting current passing through the Schottky diode by appropriate biasing of the second transistor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 12, 2010
From: RABJOHN, GORDON G.; GRUNDLINGH, JOHAN; LONG, ADRIAN
To: SIGE SEMICONDUCTOR INC.
Reel/Frame 024216/0415 →
Continuity (1)
Related Publication 20110248703A1 · Oct 13, 2011