Substrate support having fluid channel

1. A substrate support comprising:

(a) a chuck having a substrate receiving surface; and

(b) a base comprising:

(1) an upper wall comprising a recessed trench having (i) an attachment face at a first depth, and (ii) a fluid channel at a second depth, the fluid channel comprising an aspect ratio of depth to width of from about 2:1 to about 4:1;

(2) a lower wall seated in the recessed trench and attached to the attachment face of the upper wall, to close the fluid channel, the lower wall comprising a plurality of protrusions that extend into the fluid channel;

(3) a fluid inlet to supply a heat transfer fluid to the fluid channel; and

(4) a fluid outlet to discharge the heat transfer fluid from the fluid channel.

2. A support according to claim 1 wherein upper wall is electron beam brazed or welded to the lower wall at the attachment face.

3. A support according to claim 1 wherein the fluid channel has a width that is smaller than the width of the recessed trench at the first depth.

4. A support according to claim 1 wherein the fluid channel comprises serpentine convolutions such that the fluid channel curves back and forth along its length.

5. A support according to claim 4 wherein the fluid channel curves back and forth along its length at least 1 back and forth turn per 5 centimeters.

6. A support according to claim 1 wherein the upper wall comprises a plurality of integral fins that extend outwardly into the fluid channel.

7. A support according to claim 6 wherein the plurality of integral fins have an aspect ratio of height to thickness of at least about 10:1.

8. A support according to claim 6 wherein the integral fins extend downwardly from the upper wall.

9. A support according to claim 1 wherein the chuck comprises an electrostatic chuck comprising an electrode covered by a dielectric, and an electrical contact to charge the electrode.

10. A support according to claim 1 wherein the fluid inlet and fluid outlet are near each other.

11. A substrate processing chamber comprising a substrate support according to claim 1 , the chamber further comprising:

a gas supply conduit to provide a gas into the chamber;

a gas energizer to energize the gas to form a plasma; and

an exhaust port to exhaust the gas from the chamber.

12. A substrate support comprising:

(a) an electrostatic chuck having a substrate receiving surface; and

(b) a base comprising:

(1) an upper wall comprising a recessed trench having (i) an attachment face at a first depth, and (ii) a fluid channel at a second depth, the upper wall comprising at least one fin that extends outwardly into the fluid channel, the fin comprising an aspect ratio of height to thickness of at least about 10:1;

(2) a lower wall seated in the recessed trench and attached to the attachment face of the upper wall, to close the fluid channel;

(3) a fluid inlet to supply a heat transfer fluid to the fluid channel; and

(4) a fluid outlet to discharge the heat transfer fluid from the fluid channel.

13. A support according to claim 12 wherein the fluid channel has a width that is smaller than the width of the recessed trench at the first depth.

14. A support according to claim 12 wherein the fluid channel comprises serpentine convolutions such that the fluid channel curves back and forth along its length at least 1 back and forth turn per 5 centimeters.

15. A support according to claim 12 wherein the fluid channel comprises an aspect ratio of depth to width of from about 2:1 to about 4:1.

16. A support according to claim 12 wherein the fin extends downwardly from the upper wall.

17. A substrate processing chamber comprising a substrate support according to claim 12 , the chamber further comprising:

a gas supply conduit to provide a gas into the chamber;

a gas energizer to energize the gas to form a plasma; and

an exhaust port to exhaust the gas from the chamber.

18. A substrate support comprising:

(a) an electrostatic chuck having a substrate receiving surface; and

(b) a base comprising:

(1) an upper wall comprising a recessed trench having (i) an attachment face at a first depth, and (ii) a fluid channel at a second depth, the fluid channel comprising serpentine convolutions such that the fluid channel curves back and forth along its length at least 1 back and forth turn per 5 centimeters;

(2) a lower wall seated in the recessed trench and attached to the attachment face of the upper wall, to close the fluid channel;

(3) a fluid inlet and a fluid outlet that are near each other.

19. A substrate processing chamber comprising a substrate support according to claim 18 , the chamber further comprising:

a gas supply conduit to provide a gas into the chamber;

a gas energizer to energize the gas to form a plasma; and

an exhaust port to exhaust the gas from the chamber.

20. A support according to claim 12 wherein the lower wall comprises a plurality of protrusions that extend into the fluid channel.

21. A support according to claim 18 wherein the lower wall comprises a plurality of protrusions that extend into the fluid channel.

22. A substrate support comprising:

(a) an electrostatic chuck having a substrate receiving surface; and

(b) a base comprising:

(1) an upper wall comprising an attachment face and a fluid channel, the upper wall comprising at least one fin having an aspect ratio of height to thickness of at least about 10:1; and

(2) a lower wall attached to the attachment face of the upper wall to close the fluid channel, the lower wall comprising a plurality of projections that extend outwardly into the fluid channel.

23. A substrate support comprising:

(a) an electrostatic chuck having a substrate receiving surface; and

(b) a base comprising:

(1) an upper wall comprising an attachment face and a fluid channel, the fluid channel comprising serpentine convolutions such that the fluid channel curves back and forth along its length at least 1 back and forth turn per 5 centimeters; and

(2) a lower wall attached to the attachment face of the upper wall to close the fluid channel.

24. A support according to claim 18 wherein the fluid channel comprises an aspect ratio of depth to width of from about 2:1 to about 4:1.

25. A support according to claim 18 wherein the fluid channel has a width that is smaller than the width of the recessed trench at the first depth.

26. A support according to claim 18 wherein the upper wall comprises a plurality of integral fins that extend outwardly into the fluid channel.

27. A support according to claim 22 wherein the fluid channel comprises serpentine convolutions such that the fluid channel curves back and forth along its length.

28. A support according to claim 22 wherein the fluid channel comprises an aspect ratio of depth to width of from about 2:1 to about 4:1.

29. A substrate processing chamber comprising a substrate support according to claim 22 , the chamber further comprising:

a gas supply conduit to provide a gas into the chamber;

a gas energizer to energize the gas to form a plasma; and

an exhaust port to exhaust the gas from the chamber.

30. A support according to claim 23 wherein the fluid channel comprises an aspect ratio of depth to width of from about 2:1 to about 4:1.

31. A support according to claim 23 wherein the upper wall comprises a plurality of integral fins that extend outwardly into the fluid channel.

32. A substrate processing chamber comprising a substrate support according to claim 23 , the chamber further comprising:

a gas supply conduit to provide a gas into the chamber;

a gas energizer to energize the gas to form a plasma; and

an exhaust port to exhaust the gas from the chamber.