Sub-word line driver circuit and semiconductor memory device having the same

1. A sub-word line driver circuit comprising:

a substrate including a plurality of isolation areas and a plurality of active areas, the two consecutive active areas being separated by each isolation area, the isolation areas and the active areas being extended in a first direction and being arranged in a second direction perpendicular to the first direction;

a plurality of gate lines formed on the substrate, the gate lines being extended in the second direction and being arranged in the first direction; and

at least one gate tab formed on the substrate, the at least one gate tab being extended in the first direction to cover the isolation area.

2. The sub-word line driver circuit of claim 1 , wherein the at least one gate tab is enlarged in the second direction to further cover a boundary portion of the active area, the boundary portion being adjacent to the isolation area.

3. The sub-word line driver circuit of claim 1 , wherein the gate lines include a first gate line and a second gate line that are arranged consecutively in the first direction, the first gate line and the second gate line receiving a gate voltage simultaneously, and

wherein the at least one gate tab is formed to cover all of the isolation area between the first gate line and the second gate line.

4. The sub-word line driver circuit of claim 3 , wherein the at least one gate tab is enlarged in the second direction to further cover a boundary portion of the active area between the first gate line and the second gate line, the boundary portion being adjacent to the isolation area.

5. The sub-word line driver circuit of claim 3 , wherein the at least one gate tab includes a plurality of gate tabs that are arranged in the second direction, each gate tab covering each isolation area between the first gate line and the second gate line.

6. The sub-word line driver circuit of claim 3 , wherein the first gate line and the second gate line form a ring structure such that each end of the first gate line and the second gate line are extended on the isolation areas in the first direction to be connected to each other.

7. The sub-word line driver circuit of claim 1 , wherein the gate lines include a first gate line, a second gate line, a third gate line and a fourth gate line that are arranged consecutively in the first direction, the first gate line and the second gate line receiving a first gate voltage simultaneously, the third gate line and the fourth gate line receiving a second gate voltage simultaneously,

wherein the at least one gate tab includes a first gate tab and a second gate tab, the first gate tab being formed to cover all of the isolation area between the first gate line and the second gate line, the second gate tab being formed to cover all of the isolation area between the third gate line and the fourth gate line.

8. The sub-word line driver circuit of claim 7 , wherein the first gate tab and the second gate tab are enlarged in the second direction to further cover boundary portions of the active areas between the first gate line and the second gate line and between the third gate line and the fourth gate line, the boundary portions being adjacent to the isolation areas.

9. The sub-word line driver circuit of claim 7 , wherein each of the first gate tab and the second gate tab includes a plurality of gate tabs that are arranged consecutively in the second direction, each gate tab covering each isolation area between the first gate line and the second gate line and between the third gate line and the fourth gate line.

10. The sub-word line driver circuit of claim 7 , wherein the first gate tab and the second gate tab are arranged to be spaced apart from each other in the first direction.

11. The sub-word line driver circuit of claim 7 , wherein the first gate line and the second gate line form a ring structure such that each end of the first gate line and the second gate line are extended on the isolation areas in the first direction to be connected to each other, and

wherein the third gate line and the fourth gate line form a ring structure such that each end of the third gate line and the fourth gate line are extended on the isolation areas in the first direction to be connected to each other.

12. The sub-word line driver circuit of claim 1 , wherein a source region and a drain region are formed in the active area, a sub-word line drive signal being applied to the source region, a word line enable signal being applied to the gate line, the drain region being connected to a sub-word line.

13. A semiconductor memory device, comprising:

a sub-word line driver circuit configured to provide a sub-word line with a sub-word line drive signal in response to a word line enable signal; and

a memory cell array including a plurality of memory cells, each of the plurality of the memory cells being connected to the sub-word line and a bit line,

wherein the sub-word line driver circuit includes:

a substrate including a plurality of isolation areas and a plurality of active areas, the two consecutive active areas being separated by each isolation area, the isolation areas and the active areas being extended in a first direction and being arranged in a second direction perpendicular to the first direction;

a plurality of gate lines formed on the substrate, the gate lines being extended in the second direction and being arranged in the first direction; and

at least one gate tab formed on the substrate, the at least one gate tab being extended in the first direction to cover the isolation area.