Solid-state imaging device and method of manufacturing solid-state imaging device
A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided.
1. A solid-state image pickup device comprising:
a structure including at least a silicon layer, a light-receiving portion including at least one photodiode for effecting photoelectric-conversion formed in said silicon layer, an interconnection layer formed on a surface side of said silicon layer, and a lens formed at a rear side opposite to said surface side of said silicon layer;
a pad on said rear side of said silicon layer;
a first insulating layer formed on a sidewall of said pad; and
a second insulating layer formed at a peripheral portion of the light-receiving portion.
2. A solid-state image pickup device according to claim 1 , wherein said pad extends through said silicon layer.
3. A solid-state image pickup device according to claim 1 , wherein the second insulating layer traverses through the silicon layer such that an upper end of the second insulating layer is flush with the rear side opposite to said surface side of said silicon layer and a lower end of the second insulating layer protrudes past the surface side of said silicon layer.
4. A solid-state image pickup device according to claim 3 , wherein said first insulating layer is formed concurrently with said second insulating layer.
5. A solid-state image pickup device according to claim 3 , wherein said second insulating layer has a reflectivity different from the silicon layer.
6. A solid-state image pickup device according to claim 2 , wherein said pad is a pad portion constructed by connecting an electrode layer to the interconnection layer of the surface side through a contact layer.
7. A solid-state image pickup device comprising:
a silicon layer that has an upper surface that is parallel to a lower surface;
a photoelectric-conversion portion including at least one photodiode;
an interconnection layer on a lower surface side of the silicon layer;
a pad portion that extends through the silicon layer;
a filter portion,
wherein the photoelectric-conversion portion is configured along a first axis that is parallel to and between the upper and lower surfaces, and
wherein the filter portion is configured on the upper surface and configured along a second axis that aligns with the photoelectric-conversion portion and that is normal to the first axis; and
an insulating layer
that traverses through the silicon layer such that an upper end of the insulating layer is flush with the upper surface of the silicon layer and a lower end of the insulating layer protrudes past the lower surface of the silicon layer,
that is peripheral to the photoelectric-conversion portion, and
that has a reflectivity different from the silicon layer.
8. A solid-state image pickup device according to claim 7 , wherein the pad portion connects the interconnection layer to an electrode portion on the upper surface.
wherein interconnection layer connects the photoelectric-conversion portion to the pad.
9. A solid-state image pickup device according to claim 7 , wherein the filter portion comprises a lens and a color filter.
10. A solid-state image pickup device according to claim 1 , wherein the interconnection layer includes a set of interconnection portions sequentially formed within a border insulation layer formed on a surface side of said silicon layer that connect each of a set of photodiodes, which includes the at least one photodiode, located in a light-receiving portion to the pad.