Power semiconductor module
In a power semiconductor module, a semiconductor device including electrode surfaces for connection on its front side and back side is connected on its back side to a first extraction electrode through soldering; a metal surface of one side of a laminated conductor having a laminated structure in which at least two types of metals are laminated is directly, intermetallically connected to the front side of the semiconductor device; a second extraction electrode is connected to a metal surface of another side of the laminated conductor through soldering; and the laminated conductor includes a plurality of arch-like protrusions and a straight section connecting the arch-like protrusions, the straight section is connected with the front side of the semiconductor device, and the protrusions are connected with the second extraction electrode.
1. A power semiconductor module, wherein:
a semiconductor device including electrode surfaces for connection on its front side and back side is connected on its back side to a first extraction electrode through soldering;
a metal surface of one side of a laminated conductor having a laminated structure in which at least two types of metals are laminated is directly, intermetallically connected to the front side of the semiconductor device;
a second extraction electrode is connected to a metal surface of another side of the laminated conductor through soldering; and
the laminated conductor includes a plurality of arch-like protrusions and a straight section connecting the arch-like protrusions, the straight section is connected with the front side of the semiconductor device, and the protrusions are connected with the second extraction electrode.
2. A power semiconductor module according to claim 1 , wherein:
the laminated conductor is a conductor on which copper and aluminium are laminated, an aluminium side of the laminated conductor is directly metal joined to the front side of the semiconductor device, and a copper side is joined to the second extraction electrode through soldering.
3. A power semiconductor module according to claim 1 , wherein:
the front side of the semiconductor device and the metal surface of the one side of the laminated conductor are ultrasonically connected.
4. A power semiconductor module according to claim 1 , wherein:
an end of the first extraction electrode constitutes a first terminal for external connection, and an end of the second extraction electrode constitutes a second terminal for external connection.
5. A power semiconductor module according to claim 1 , comprising:
a first cooling device that cools the power semiconductor module, wherein:
the first extraction electrode and the laminated conductor are arranged on a heat receiving surface of the first cooling device through a flat plate-like insulating plate, and the second extraction electrode includes a second cooling device.
6. A power semiconductor module according to claim 5 , wherein:
the first and second cooling devices are metal conductors in which cooling fins are formed.
7. A power semiconductor module, wherein:
a semiconductor device including electrode surfaces for connection on its front side and back side is connected on its back side to a first extraction electrode through soldering;
a metal surface of one side of a laminated conductor having a laminated structure in which at least two types of metals are laminated is directly, intermetallically connected to the front side of the semiconductor device;
a second extraction electrode is connected to a metal surface of another side of the laminated conductor through soldering;
the laminated conductor includes a plurality of arch-like protrusions and a straight section connecting the arch-like protrusions, the straight section is connected with the front side of the semiconductor device, and the protrusions are connected with the second extraction electrode;
the first extraction electrode and the laminated conductor are arranged on a surface of one side of a flat plate-like first cooling device through a flat plate-like insulating plate, and the second extraction electrode is arranged on a surface of one side of a flat plate-like second cooling device; and
a capacitor to suppress voltage variations when switching is arranged on a surface of another side of the first cooling device, and a driver board that drives switching of the semiconductor device is arranged on a top surface of the capacitor.
8. A power conversion unit, comprising:
a power semiconductor module wherein:
a semiconductor device including electrode surfaces for connection on its front side and back side is connected on its back side to a first extraction electrode through soldering;
a metal surface of one side of a laminated conductor having a laminated structure in which at least two types of metals are laminated is directly, intermetallically connected to the front side of the semiconductor device; and
a second extraction electrode is connected to a metal surface of another side of the laminated conductor through soldering, wherein:
the laminated conductor includes a plurality of arch-like protrusions and a straight section connecting the arch-like protrusions, the straight section is connected with the front side of the semiconductor device, and the protrusions are connected with the second extraction electrode;
the first extraction electrode and the laminated wiring conductor are arranged on a surface of one side of a flat plate-like first cooling device, inside of which a cooling passage is formed, through a flat plate-like insulating plate, and the second extraction electrode is arranged on a surface of one side of a flat plate-like second cooling device, inside of which a cooling passage is formed; and
a capacitor to suppress voltage variations when switching is arranged on a surface of another side of the first cooling device, and a driver board that drives switching of the semiconductor device is arranged on a top surface of the capacitor.