Wavelength conversion element and light emitting device
A wavelength conversion element, including: a substrate; and a ceramic layer formed on the substrate, the ceramic layer being obtained by sintering a ceramic precursor; wherein the ceramic precursor is a compound selected from the group composed of alkoxysilane and a compound having a plurality of siloxane structures; a phosphor and particles of an oxide are mixed with the ceramic precursor; the phosphor has particle diameters within a range of from 1 μm to 50 μm and a concentration of the phosphor in the ceramic layer is equal to or more than 40 wt % and less than 95 wt %; and the particles of the oxide have primary particle diameters within a range of from 0.001 μm to 30 μm and a concentration within a range of from 0.5 wt % to 20 wt % in the ceramic layer.
1. A wavelength conversion element, comprising:
a substrate; and
a ceramic layer formed on the substrate, the ceramic layer being obtained by sintering a ceramic precursor; wherein
the ceramic precursor is a compound selected from the group composed of alkoxysilane and a compound having a plurality of siloxane structures;
a phosphor and particles of an oxide are mixed with the ceramic precursor;
the phosphor has particle diameters within a range of from 1 μm to 50 μm and a concentration of the phosphor in the ceramic layer is equal to or more than 40 wt % and less than 95 wt %; and
the particles of the oxide have primary particle diameters within a range of from 0.001 μm to 30 μm and a concentration within a range of from 0.5 wt % to 20 wt % in the ceramic layer.
2. The wavelength conversion element according to claim 1 , wherein a thickness of the ceramic layer is within a range of from 5 μm to 200 μm.
3. A light emitting device, comprising:
an LED element emitting a light of a specific wavelength; and
a wavelength conversion element receiving the light of the LED element to convert the wavelength; wherein
the wavelength conversion element includes a substrate and a ceramic layer formed on the substrate, the ceramic layer being obtained by sintering a ceramic precursor;
the ceramic precursor is a compound selected from the group composed of alkoxysilane and a compound having a plurality of siloxane structures;
a phosphor and particles of an oxide are mixed with the ceramic layer;
the phosphor has particle diameters within a range of from 1 μm to 50 μm and a concentration of the phosphor in the ceramic layer is equal to or more than 40 wt % and less than 95 wt %; and
the particles of the oxide have primary particle diameters within a range of from 0.001 μm to 30 μm and a concentration within a range of from 0.5 wt % to 20 wt % in the ceramic layer.
4. The light emitting device according to claim 3 , wherein a thickness of the ceramic layer is within a range of from 5 μm to 200 μm.
5. The light emitting device according to claim 3 , wherein a carbon content rate of the particles of the oxide is 10 wt % or less.