Semiconductor devices and methods of fabricating the same
Exposed are a semiconductor device and method of fabricating the same. The device includes an insulation film that is disposed between an active pattern and a substrate, which provides various improvements. This structure enhances the efficiency of high integration and offers an advanced structure for semiconductor devices.
1. A method of fabricating a semiconductor device, the method comprising:
forming a sacrificial film and an active layer in sequence on a substrate;
successively patterning the active layer, the sacrificial film, and the substrate to form a sacrificial pattern and an active pattern stacked in sequence, and a trench;
forming a field isolation film to fill the trench;
partially recessing the field isolation film to partially expose the sacrificial pattern;
removing the sacrificial pattern by isotropically etching to form an empty region;
forming a dielectric film to fill the empty region;
forming an embedded pattern to fill the recess region on the dielectric film formed on the bottom and sidewall of the recess region of the field isolation film;
forming a gate insulation film and a gate electrode to be stacked in sequence on the active pattern; and
forming a pair of impurity layers to locate in the active pattern at both sides of the gate electrode, respectively, the bottoms of the impurity layers contacting with the dielectric film,
wherein a channel region between the impurity layers is a data storage field.
2. The method as set forth in claim 1 , wherein the substrate is supplied with a voltage to provide attraction for excessive charges stored in the channel region.
3. The method as set forth in claim 1 , wherein the dielectric film includes an insulation material higher than silicon oxide in dielectric constant.