Fabrication of vertically aligned metallic nanopillars
Solid and hollow cylindrical nanopillars with nanoscale diameters are provided. Also provides is a method of making such nanopillars using electron beam lithography followed by the electroplating.
1. A solid or hollow nano-crystalline pillar structure lacking Ga + ion damage, made by a process comprising
(a) coating a substrate with a conductive layer;
(b) coating the conductive layer with a resist polymer;
(c) using an electron beam lithography technique to pattern a template into the resist polymer;
(d) electrodepositing a metal into the template; and
(e) removing the resist; and (f) coating over the substrate having the conductive layer and the metal with a metal oxide, a metal nitride or other organo-metallic materials.
2. The solid or hollow nano-crystalline pillar structure of claim 1 , wherein the substrate comprises a material selected from the group consisting of silicon dioxide, fused-silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, hardened sapphire, and a ceramic.
3. The solid or hollow nano-crystalline pillar structure of claim 2 , wherein the substrate is silicon.
4. The solid or hollow nano-crystalline pillar structure of claim 1 , wherein the conductive layer comprises a conductive metal.
5. The solid or hollow nano-crystalline pillar structure of claim 1 , wherein the resist polymer comprises polymethylmethacrylate.
6. The solid or hollow nano-crystalline pillar structure of claim 1 , wherein the electrode positing is by potentiostatic, galvanostatic or by alternating current/voltage techniques.
7. The solid or hollow nano-crystalline pillar structure of claim 1 , wherein the metal is selected from the group consisting of gold, silver, rhodium, copper, chrome, nickel, brass, iridium and alloys of any of the foregoing.
8. A method of making a nanopillar composition lacking Ga + ion damage comprising:
(a) coating a substrate with a conductive layer;
(b) coating the conductive layer with a resist polymer;
(c) using an electron beam lithography technique to pattern a template into the resist polymer;
(d) electrodepositing a metal into the template; and
(e) removing the resist; and (f) coating over the substrate having the conductive layer and the metal with a metal oxide, a metal nitride or other organo-metallic materials.
9. The method of claim 8 , wherein the substrate comprises a material selected from the group consisting of silicon dioxide, fused-silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, hardened sapphire and a ceramic.
10. The method of claim 9 , wherein the substrate is silicon.
11. The method of claim 8 , wherein the conductive layer comprises a conductive metal.
12. The method of claim 8 , wherein the resist polymer comprises polymethyl methacrylate.
13. The method of claim 8 , wherein the electrodepositing is by potentiostatic, galvanostatic or by alternating current/voltage techniques.
14. The method of claim 8 , wherein the metal is selected from the group consisting of gold, silver, rhodium, copper, chrome, nickel, brass, iridium and alloys of any of the foregoing.