Trench-based power semiconductor devices with increased breakdown voltage characteristics
Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
1. A semiconductor device comprising:
a first trench extending into an epitaxial layer and including a first shield electrode and a gate electrode disposed therein, the first shield electrode of the first trench being electrically insulated from the gate electrode;
a source pad electrically coupled to the first shield electrode of the first trench;
a gate pad electrically coupled to the gate electrode of the first trench; and
a second trench extending into the epitaxial layer and having at least a portion disposed directly under the gate pad between the gate pad and a substrate, the second trench including a second shield electrode disposed therein, the second shield electrode having a vertical length greater than a vertical length of the first shield electrode.
2. The semiconductor device of claim 1 , wherein the second shield electrode of the second trench is electrically coupled to the source pad.
3. The semiconductor device of claim 1 , wherein the second shield electrode of the second trench is electrically floating.
4. The semiconductor device of claim 1 , wherein the gate electrode of the first trench is a first gate electrode, the second trench includes a second gate electrode vertically stacked over the second shield electrode of the second trench, the second shield electrode of the second trench being electrically insulated from the second gate electrode of the second trench, the second gate electrode of the second trench is electrically coupled to the gate pad.
5. The semiconductor device of claim 1 , wherein the second shield electrode of the second trench is electrically coupled to the source pad,
the semiconductor device further comprising:
a third trench including an electrically floating electrode disposed therein.
6. The semiconductor device of claim 1 , further comprising:
a third trench disposed directly under the gate pad and adjacent to the second trench; and
a mesa of semiconductor material disposed between the second trench and the third trench and being an electrically floating mesa.
7. The semiconductor device of claim 1 , further comprising:
a third trench disposed directly under the gate pad and adjacent to the second trench, the third trench including an electrically floating electrode disposed therein.
8. The semiconductor device of claim 1 , further comprising:
a third trench disposed directly under the gate pad and adjacent to the second trench, the third trench including a third shield electrode coupled to the source pad.
9. The semiconductor device of claim 1 , further comprising:
a gate riser formed on the gate electrode and electrically coupled to the gate pad; and
a third trench disposed under the gate riser.
10. The semiconductor device of claim 1 , further comprising:
a well region of a first conductivity type disposed in the epitaxial layer and adjacent to the first trench.
11. The semiconductor device of claim 10 , wherein the well region is electrically floating.
12. The semiconductor device of claim 10 , wherein the well region is electrically coupled to the source pad.
13. The semiconductor device of claim 1 , further comprising:
a first well region disposed on a first side of the first trench, the first well region being electrically coupled to the source pad; and
a second well region disposed on a second side of the first trench, the second well being electrically floating.
14. The semiconductor device of claim 1 , further comprising:
a first mesa of semiconductor material adjacent to the first trench;
a third trench disposed directly under the gate pad and adjacent to the second trench; and
a second mesa of semiconductor material disposed between the second trench and the third trench, the second mesa has a width that is approximately 1.25 times the width of the first mesa.
15. A semiconductor device, comprising:
a first trench extending into an epitaxial layer and including a first shield electrode and a gate electrode disposed therein, the first shield electrode of the first trench being electrically insulated from the gate electrode;
a gate riser electrically coupled to the gate electrode of the first trench;
a gate pad electrically coupled to the gate electrode of the first trench via the gate riser; and
a second trench extending into the epitaxial layer and having at least a portion disposed directly under the gate pad between the gate pad and a substrate, the second trench including a second shield electrode disposed therein, the second shield electrode having a vertical length greater than a vertical length of the first shield electrode.
16. The semiconductor device of claim 15 , further comprising:
a source pad electrically coupled to the first shield electrode of the first trench.
17. The semiconductor device of claim 15 , further comprising:
a source pad electrically coupled to the first shield electrode of the first trench and electrically coupled to the second shield electrode of the second trench.
18. The semiconductor device of claim 15 , wherein the first shield electrode is electrically floating.
19. The semiconductor device of claim 15 , wherein the second shield electrode is electrically floating.
20. The semiconductor device of claim 15 , wherein the first trench is disposed directly below the gate riser.
21. The semiconductor device of claim 15 , further comprising:
a third trench including a third shield electrode disposed therein, the first trench is disposed directly below the gate riser, the first trench is disposed between the second trench and the third trench.
22. The semiconductor device of claim 15 , further comprising:
a third trench including an electrically floating electrode disposed therein, the first trench is disposed directly below the gate riser, the first trench is disposed between the second trench and the third trench.
23. The semiconductor device of claim 15 , further comprising:
a first mesa of semiconductor material adjacent to the first trench;
a third trench disposed directly under the gate pad and adjacent to the second trench; and
a second mesa of semiconductor material disposed between the second trench and the third trench, the second mesa has a width that is approximately 1.25 times the width of the first mesa.
24. The semiconductor device of claim 15 , wherein the second shield electrode of the second trench is electrically coupled to a source pad,
the semiconductor device further comprising:
a third trench including an electrically floating electrode disposed therein.
25. The semiconductor device of claim 15 , further comprising:
a third trench disposed directly under the gate pad and adjacent to the second trench; and
a mesa of semiconductor material disposed between the second trench and the third trench and being an electrically floating mesa.
26. The semiconductor device of claim 15 , further comprising:
a well region of a first conductivity type disposed in the epitaxial layer and adjacent to the first trench.
27. The semiconductor device of claim 26 , wherein the well region is electrically floating.
28. The semiconductor device of claim 26 , wherein the well region is electrically coupled to the source pad.