Switching power supply device and a semiconductor integrated circuit
In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
1. A semiconductor module device packed in one package, the semiconductor module device being for a regulator and for use with a capacitor, the semiconductor module device comprising:
an input voltage terminal;
an output terminal;
a ground potential terminal;
a power terminal;
a first semiconductor chip including a first MOSFET having a source-drain path coupled between the input voltage terminal and the output terminal and a gate;
a second semiconductor chip including a second MOSFET having a source-drain path coupled between the output terminal and the ground potential terminal and a gate; and
a third semiconductor chip coupled to the power terminal, coupled to provide a first control signal to the gate of the first MOSFET and coupled to provide a second control signal to the gate of the second MOSFET, the third semiconductor chip comprising a P-channel switch MOSFET having a source-drain path coupled between the power terminal and the output terminal via the capacitor,
wherein the switch MOSFET is in a conductive state when the second MOSFET is in the conductive state and is in a non-conductive state when the second MOSFET is in a non-conductive state, and
wherein the switch MOSFET has a source region of a P-type and a drain region of the P-type and is formed in an N-type region and includes a parasitic diode between the drain region and the N-type region, the parasitic diode being in a reverse bias state when the second MOSFET is in the non-conductive state.
2. A semiconductor module device according to claim 1 ,
wherein the first MOSFET and the second MOSFET are N-channel MOSFETs,
wherein the source region of the first MOSFET is coupled to the drain region of the second MOSFET.
3. A semiconductor module device according to claim 1 ,
wherein the third semiconductor chip includes a pulse width modulation circuit which provides pulse width modulation signals as the first control signal and the second control signal.
4. A semiconductor module device according to claim 1 ,
wherein an amplitude of the first control signal is larger than a voltage applied to the power terminal.
5. A semiconductor module device according to claim 1 ,
wherein a voltage from the power terminal is lower than a voltage supplied to the input voltage terminal.
6. A semiconductor module device packed in one package, the semiconductor module device being for a regulator and for use with a capacitor, the semiconductor module device comprising:
an input voltage terminal;
an output terminal;
a ground potential terminal;
a power terminal;
a first semiconductor chip including a first MOSFET having a source-drain path coupled between the input voltage terminal and the output terminal, and a gate;
a second semiconductor chip including a second MOSFET having a source-drain path coupled between the output terminal and the ground potential terminal and a gate; and
a third semiconductor chip coupled to the power terminal, coupled to provide a first control signal to the gate of the first MOSFET and coupled to provide a second control signal to the gate of the second MOSFET, the third semiconductor chip comprising an N-channel switch MOSFET with having a source-drain path coupled between the power terminal and the output terminal via the capacitor,
wherein the switch MOSFET is in a conductive state when the second MOSFET is in the conductive state and is in a non-conductive state when the second MOSFET is in a non-conductive state, and
wherein the switch MOSFET has a source region of an N-type and a drain region of the N-type and is formed in a P-type region and includes a parasitic diode between the P-type region and the drain region and, the parasitic diode being in a reverse bias state when the second MOSFET is in the non-conductive state.
7. A semiconductor module device according to claim 6 ,
wherein the first MOSFET and the second MOSFET are N-channel MOSFETs,
wherein the source region of the first MOSFET is coupled to the drain region of the second MOSFET.
8. A semiconductor module device according to claim 6 ,
wherein the third semiconductor chip includes a pulse width modulation circuit which provides pulse width modulation signals as the first control signal and the second control signal.
9. A semiconductor module device according to claim 6 ,
wherein an amplitude of the first control signal is larger than a voltage applied to the power terminal.
10. A semiconductor module device according to claim 6 ,
wherein a voltage from the power terminal is lower than a voltage supplied to the input voltage terminal.