IP Library Granted Patent US 8,318,121
Granted Patent B2
US 8,318,121 · App. 12/516,840 · Granted Nov 27, 2012

Device and method for the processing of non-ferrous metals

Assignee: Sunicon AG
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Quick Facts
Patent No.
US 8,318,121
App. No.
12/516,840
Granted
Nov 27, 2012
Kind
B2
Abstract

In a device and a method for the processing of non-ferrous metals for simple and economic reduction of the concentration of impurity elements and/or impurity compounds contained in the non-ferrous metal, it is provided to gas the non-ferrous metal in a processing column with at least one gas at a low pressure, causing the impurity elements and/or impurity compounds to evaporate.

Claims (10)

1. A method for processing silicon, the method comprising the following steps:

providing at least one processing reactor, said at least one processing reactor comprising at least one reactor container, at least one processing column arranged inside the reactor container, and at least one heating device arranged outside the reactor container;

melting silicon, which is contaminated with one or more of at least one impurity element and at least one impurity compound, by means of at least one melting device to form molten silicon;

supplying the molten silicon to the at least one processing column;

heating the at least one processing column to a reaction temperature by means of the at least one heating device;

generating a low pressure in the reactor container by means of at least one low-pressure generation device;

gassing the molten silicon, which has been supplied to the at least one processing column, with at least one gas by means of a gas supply device;

evaporating said one or more of at least one impurity element and at least one impurity compound from the silicon, which is at least one of surrounded and passed through by the at least one gas, at low pressure;

recovering silicon, which has evaporated during the evaporation, by means of at least one filtering device, said filtering device comprising a first filter element and at least a second filter element; and

discharging the processed silicon from the processing reactor, wherein the first filter element comprises a hollow space with a bed of solid solar silicon.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 19, 2015
From: DEUTSCHE SOLAR GMBH
To: SOLARWORLD INDUSTRIES SACHSEN GMBH
Reel/Frame 036343/0324 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 29, 2009
From: WAMBACH, KARSTEN, DR.; KNOPF, CLAUDIA, DR.; ROEVER, INGO, DR.
To: SUNICON AG
Reel/Frame 022751/0622 →
Priority Claims (1)
DE 10 2006 056 482 · Nov 30, 2006 · national
Continuity (1)
Related Publication 20100040526A1 · Feb 18, 2010