Method for selective deposition and devices

1. A deposition method for forming a patterned thin film comprising:

A) applying a composition comprising a deposition inhibitor material to a substrate,

B) simultaneously or subsequently to step A), patterning the deposition inhibitor material to provide selected areas on the substrate where the deposition inhibitor material is absent, and

C) depositing an inorganic thin film on the substrate by chemical vapor deposition only in those areas where the deposition inhibitor material is absent,

wherein the deposition inhibitor material is a hydrophilic poly(vinyl alcohol) having a degree of hydrolysis of less than 95%.

2. The method of claim 1 wherein the inorganic thin film is deposited on the substrate by atomic layer deposition.

3. The method of claim 1 wherein the hydrophilic polymer has a degree of hydrolysis of less than 90%.

4. The method of claim 1 wherein the hydrophilic polymer has a degree of hydrolysis of at least 50% and less than 85%.

5. The method of claim 1 wherein the hydrophilic polymer satisfies both of the following tests:

a) it is soluble to at least 1% by weight in a solution containing at least 50 weight % water as measured at 40° C., and

b) it provides an inhibition power of at least 200 Å to deposition of zinc oxide by an ALD process.

6. The method of claim 1 wherein the inorganic thin film is either a metal or a metal containing compound.

7. The method of claim 6 wherein the metal-containing compound contains a group V or group VI anion, or it is an oxide, nitride, sulfide, or phosphide, or a combination thereof.

8. The method of claim 1 wherein the inorganic thin film contains zinc oxide.

9. The method of claim 6 wherein inorganic thin film contains zinc, aluminum, hafnium, zirconium, or indium, or any combination of these metals.

10. The method of claim 6 wherein the inorganic thin film contains copper, tungsten, aluminum, nickel, ruthenium, or rhodium.

11. The method of claim 1 wherein step A is depositing a uniform layer of the composition comprising the deposition inhibitor material.

12. The method of claim 1 wherein step A is depositing a pattern of the composition comprising the deposition inhibitor material.

13. The method of claim 12 wherein the composition comprising the deposition inhibitor material is deposited by inkjet printing, gravure, flexography, donor transfer, micro-contact printing, or offset lithography.

14. The method of claim 2 wherein the inorganic thin film is deposited using spatially dependant ALD that comprises:

providing a series of gas channels, each in contact with a discrete separate region of a substrate, and each gas channel having a gas composition, the gas composition comprising, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, and optionally repeating this sequence a plurality of times,

moving the substrate relative to the gas channels so that a portion of the substrate comes into contact sequentially with at least two gas zones,

wherein the first reactive gaseous material is capable of reacting with a substrate surface that has been treated with the second reactive gaseous material to form the inorganic thin film.

15. The method of claim 1 wherein a given area of the substrate is exposed to a gas flow in an elongated opening for less than 100 milliseconds.

16. The method of claim 1 wherein the relative movement of the substrate to a deposition device is at a speed of at least 0.1 cm/sec.

17. The method of claim 14 wherein the second reactive gaseous material is a non-metallic compound.

18. The method of claim 1 wherein the substrate or a support for the substrate comprises a moving web.