Light emitting device
Disclosed is a light emitting device including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer and an active layer arranged between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, wherein the light emitting structure has a top surface including a first side and a second side which face each other, and a third side and a fourth side which face each other.
1. A light emitting device, comprising:
a light emitting structure arranged on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer and an active layer arranged between the first semiconductor layer and the second semiconductor layer;
a first electrode electrically connected to the first semiconductor layer; and
a second electrode electrically connected to the second semiconductor layer,
wherein the light emitting structure has a top surface including a first side and a second side which face each other, and a third side and a fourth side which face each other,
wherein the first electrode includes:
a first electrode pad adjacent to the edge of the second side and the third side in the exposed part of the first semiconductor layer; and
a first electrode arm connected to the first electrode pad, the first electrode arm extending in a first direction,
the second electrode includes:
a second electrode pad adjacent to the fourth side on the second semiconductor layer; and
a second electrode arm connected to the second electrode pad, the second electrode arm extending in an opposite direction to the first direction and the second electrode arm formed adjacent to the center of the second semiconductor layer,
the distance from the first electrode arm to the second electrode arm in the second direction is 25% to 75% of the width of the second semiconductor layer in the second direction.
2. The light emitting device of claim 1 , wherein the second electrode pad is formed adjacent to the edge between the first side and the fourth side.
3. The light emitting device of claim 1 , wherein the second electrode pad is formed adjacent to the center of the width of the second semiconductor layer in the second direction.
4. The light emitting device of claim 1 , wherein the second electrode arm is connected to an upper part of the second electrode pad in the second direction.
5. The light emitting device of claim 1 , wherein the second electrode arm is connected to the center of the second electrode pad in the second direction.
6. The light emitting device of claim 1 , wherein the second electrode arm is connected to a lower part of the second electrode pad in the second direction.
7. The light emitting device of claim 1 , wherein the first electrode arm and the second electrode arm are formed in parallel.
8. The light emitting device of claim 1 , wherein at least one of the first and second electrode pads has a circular shape or a shape having a curved part.
9. The light emitting device of claim 1 , wherein the first and second electrode pads have different shapes.
10. The light emitting device of claim 1 , wherein the lengths of the first and second electrode arms are equivalent or one thereof is greater.
11. The light emitting device of claim 1 ,
wherein the second electrode pad does not overlap the first electrode pad in the first direction.
12. The light emitting device of claim 1 , further comprising:
a current blocking layer arranged between a light-transmitting electrode layer and the second electrode, or between a light-transmitting electrode layer and the second semiconductor layer, or inside the light-transmitting electrode layer.
13. The light emitting device of claim 12 , wherein the current blocking layer vertically partially overlaps the second electrode.
14. The light emitting device of claim 1 , wherein the first electrode is arranged in one part of the first semiconductor layer formed by mesa-etching the active layer and the second semiconductor layer.
15. A light emitting device comprising:
a substrate;
a light emitting structure arranged on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer and an active layer arranged between the first semiconductor layer and the second semiconductor layer;
a first electrode arranged on the first semiconductor layer, the first electrode including a first electrode pad and a first electrode arm extending from the first electrode pad in a first direction; and
a second electrode arranged on the second semiconductor layer, the second electrode including a second electrode pad and a second electrode arm extending parallel to the first electrode arm,
wherein a first distance between the first electrode arm and the second electrode arm is 25% to 75% of the width of the light emitting structure, and
a second distance between one side of the second semiconductor layer and the second electrode arm adjacent thereto is 25% to 50% of the width of the second semiconductor layer.
16. A light emitting device package comprising:
a light emitting device including a light emitting diode; and
a body including a first lead frame provided with the light emitting device and a second lead frame spaced from the first lead frame,
wherein the light emitting device comprises:
a substrate;
a light emitting structure arranged on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer and an active layer arranged between the first semiconductor layer and the second semiconductor layer;
a first electrode arranged on the first semiconductor layer, the first electrode including a first electrode pad electrically connected to the first lead frame and a first electrode arm extending from the first electrode pad in a first direction; and
a second electrode arranged on the second semiconductor layer, the second electrode including an second electrode between the center of the second semiconductor layer and the one side of the second semiconductor layer, and a second electrode arm extending parallel to the first electrode pad,
wherein a distance between the first electrode arm and the second electrode arm is 25% to 75% of the width of the light emitting structure, and
a second distance between the one side of the second semiconductor layer and the second electrode arm adjacent thereto is 25% to 50% of the width of the second semiconductor layer.
17. The light emitting device package of claim 16 , wherein the second electrode arm is connected to an upper part of the second electrode pad in the second direction.
18. The light emitting device package of claim 16 , wherein the second electrode arm is connected to the center of the second electrode pad in the second direction.
19. The light emitting device of claim 15 , wherein the second electrode arm is connected to an upper part of the second electrode pad in the second direction.
20. The light emitting device of claim 15 , wherein the second electrode arm is connected to the center of the second electrode pad in the second direction.