Substrate treating method and method of manufacturing semiconductor device using the same
View Patent ↗A substrate treating method comprising a step of preparing a semiconductor substrate (W, 11 ) which has an oxide film ( 13, 14 ) containing at least one of a rare earth oxide and an alkaline earth oxide, at least a portion of the oxide film ( 13, 14 ) being exposed, and a rinse step of supplying the oxide film ( 13, 14 ) on the semiconductor substrate (W, 11 ) with a rinse liquid made of an alkaline chemical or an organic solvent. Preferably, the alkaline chemical is an alkaline aqueous solution having a pH of more than 7. Further, preferably, the organic solvent is a high concentration organic solvent having a concentration of substantially 100%.
1. A method of manufacturing a semiconductor device, comprising:
a step of preparing a semiconductor substrate which has an oxide film containing at least one of a rare earth oxide and an alkaline earth oxide, at least a portion of the oxide film being exposed; and
a rinse step of supplying the oxide film on the semiconductor substrate with a rinse liquid made of an alkaline chemical or an organic solvent;
wherein the step of preparing a semiconductor substrate includes:
a step of forming a laminate film on a surface of the semiconductor substrate, the laminate film being obtained by laminating an oxide film containing at least one of a rare earth oxide and an alkaline earth oxide, and a high dielectric constant film made from a material of which the dielectric constant is higher than that of silicon oxide;
a step of forming a conductive film on the laminate film; and
a gate forming step of forming a gate structure by patterning the conductive film and the laminate film thereby to expose at least a portion of the oxide film; and
the step of forming a laminate film includes:
a step of forming a photoresist mask in a predetermined region on the oxide film and etching the oxide film exposed from the photoresist mask; and
a step of exposing the oxide film in the predetermined region by removing the photoresist mask after the etching, wherein
the rinse step is executed immediately after at least one of: the formation of the oxide film; the oxide film etching on the part exposed from the photoresist mask; the removal of the photoresist mask; and the gate forming step.
2. A method of manufacturing a semiconductor device comprising:
a step of preparing a semiconductor substrate which has an oxide film containing at least one of a rare earth oxide and an alkaline earth oxide, at least a portion of the oxide film being exposed; and
a rinse step of supplying the oxide film on the semiconductor substrate with a rinse liquid made of an alkaline chemical or an organic solvent;
wherein the step of preparing a semiconductor substrate includes:
a step of forming a laminate film on a surface of the semiconductor substrate, the laminate film being obtained by laminating an oxide film containing at least one of a rare earth oxide and an alkaline earth oxide, and a high dielectric constant film made from a material of which the dielectric constant is higher than that of silicon oxide;
a step of forming a conductive film on the laminate film; and
a gate forming step of forming a gate structure by patterning the conductive film and the laminate film thereby to expose at least a portion of the oxide film; and
the step of forming the laminate film includes:
a first etching step of forming a first photoresist mask, in a first region on the oxide film as a first oxide film, and etching a part of the first oxide film exposed from the first photoresist mask;
a step of exposing the first oxide film in the first region by removing the first photoresist mask after the first etching step;
a step of forming on the semiconductor substrate a second oxide film made of a material different from that of the first oxide film;
a second etching step of forming a second photoresist mask in a second region different from the first region on the second oxide film and etching a part of the second oxide film exposed from the second photoresist mask; and
a step of exposing the second oxide film in the second region by removing the second photoresist mask after the second etching step,
the gate forming step including a step of forming at least a pair of gate structures positioned in the first region and the second region, respectively, wherein
the rinse step is executed immediately after at least one of: the formation of the first oxide film; the first oxide film etching on the part exposed from the first photoresist mask; the removal of the first photoresist mask; the formation of the second oxide film; the second oxide film etching on the part exposed from the second photoresist mask; the removal of the second photoresist mask; and the gate forming step.
3. The method of manufacturing a semiconductor device according to claim 2 , wherein the first oxide film and the second oxide film are made of metal oxides having different work functions.