Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide
Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
1. A process for making an insulator in a microelectronic device, the process comprising:
introducing a first reactant component into a deposition chamber;
introducing a second reactant component into the deposition chamber; and
alternately repeating introducing the first reactant component and the second reactant component into the deposition chamber;
wherein deposition of the first reactant component and the second reactant component are self-limiting;
wherein said first reactant component comprises a metal alkylamide;
wherein said second reactant component interacts with the deposited first reactant component to form the insulator; and
wherein said insulator comprises oxygen and the metal from the metal alkylamide.
2. The process as in claim 1 , wherein the insulator insulates a gate or a capacitor.
3. The process in claim 2 , wherein the metal alkylamide is a hafnium dialkylamide.
4. The process as in claim 3 , wherein the hafnium dialkylamide is tetrakis(ethylmethylamido)hafnium.
5. The process as in claim 3 , wherein the hafnium dialkylamide is tetrakis(dimethylamido)hafnium.
6. A process as in claim 3 , wherein the hafnium dialkylamide is tetrakis(diethylamido)hafnium.
7. A process as in claim 2 , wherein the metal alkylamide is a zirconium dialkylamide.
8. A process as in claim 7 , wherein the zirconium dialkylamide is tetrakis(ethylmethylamido)zirconium.
9. A process as in claim 7 , wherein the zirconium dialkylamide is tetrakis(dimethylamido)zirconium.
10. A process as in claim 7 , wherein the zirconium dialkylamide is tetrakis(diethylamido)zirconium.