Gate-in-panel type liquid crystal display device with shortage-preventing pattern and method of fabricating the same
A liquid crystal display device comprises: a first substrate and a second substrate facing and spaced apart from each other, the first substrate and the second substrate including an active area, a signal input area and a pad area, the signal input area and the pad area being disposed at a periphery of the active area; a gate line and a data line on the first substrate in the active area, the gate line and the data line crossing each other; first connection lines and second connection lines in the signal input area, the first connection lines extending to the pad area and crossing the second connection lines; a gate connection pattern contacting the first connection lines and the second connection lines; a common electrode on the second substrate; a shortage-preventing pattern on the common electrode and corresponding to the gate connection pattern; a seal pattern surrounding the active area, the seal pattern including a conductive ball; and a liquid crystal layer between the first and second substrates in the seal pattern.
1. A method of fabricating a liquid crystal display device, comprising:
forming first connection lines, second connection lines and a gate connection pattern on a first substrate including an active area, a signal input area and a pad area, wherein the signal input area and the pad area are disposed at a periphery of the active area, and the gate connection pattern contacting the first connection lines and the second connection lines in the signal input area;
forming a common electrode on a second substrate;
forming a shortage-preventing pattern, wherein the shortage-preventing pattern corresponds to the gate connection pattern;
forming a seal pattern surrounding the active area, the seal pattern including a conductive ball;
attaching the first and second substrates such that the shortage-preventing pattern faces the gate connection pattern; and
forming a liquid crystal layer between the first and second substrates in the seal pattern.
2. The method according to claim 1 , wherein said shortage preventing pattern is formed on the common electrode.
3. The method according to claim 1 , wherein said shortage preventing pattern is formed on the gate connection pattern.
4. The device according to claim 1 , wherein said shortage preventing pattern is made from a material selected from one of a dielectric, resin, plastic or glass.
5. The method according to claim 1 , further comprising:
forming a gate line on the first substrate in the active area;
forming a gate insulating layer on the gate line and the first connection lines;
forming a data line on the gate insulating layer in the active area, the data line crossing the gate line; and
forming a passivation layer on the data line and the second connection lines, the passivation layer having a first contact hole exposing the first connection lines and the second connection lines.
6. The method according to claim 5 , further comprising:
forming a thin film transistor connected to the gate line and the data line; and
forming a pixel electrode on the passivation layer and connected to the thin film transistor.
7. The method according to claim 6 , wherein the thin film transistor includes a gate electrode, the gate insulating layer on the gate electrode, a semiconductor layer on the gate insulating layer, a source electrode on the semiconductor layer and a drain electrode spaced apart from the source electrode.
8. The method according to claim 6 , wherein the gate connection pattern and the pixel electrode are simultaneously formed on the passivation layer.
9. The method according to claim 1 , further comprising:
forming a first black matrix and a second black matrix on the second substrate, the first black matrix corresponding to the active area and the second black matrix corresponding to the signal input area; and
forming a color filter layer on the first black matrix.
10. The method according to claim 1 , further comprising forming a patterned spacer on the common electrode corresponding to the active area.
11. The method according to claim 10 , wherein the shortage-preventing pattern and the patterned spacer are simultaneously formed on the common electrode.
12. A shortage preventing structure for a liquid crystal display device comprising:
a first height; and
a second width different from a width of a gate connection pattern;
wherein said shortage preventing structure is substantially disposed between a common electrode and said gate connection pattern,
wherein said gate connection pattern is disposed within a perimeter of said shortage preventing structure, and
wherein said shortage preventing structure is formed in a seal pattern including a conductive ball.
13. The shortage preventing structure of claim 12 , wherein said shortage preventing structure is a material selected from one of a dielectric, resin, plastic or glass.
14. The shortage preventing structure of claim 12 , wherein the first height is greater than a radius of the conductive ball.