Semiconductor device and method for manufacturing the same
View Patent ↗In a thin film transistor which uses an oxide semiconductor, buffer layers containing indium, gallium, zinc, oxygen, and nitrogen are provided between the oxide semiconductor layer and the source and drain electrode layers.
1. A thin film transistor comprising:
a gate electrode;
a gate insulating film which covers the gate electrode;
an oxide semiconductor layer which overlaps with the gate electrode with the gate insulating film interposed therebetween;
a first electrode and a second electrode over the oxide semiconductor layer, an end portion of the first electrode and an end portion of the second electrode overlapping with the gate electrode;
a first buffer layer which is in contact with the oxide semiconductor layer and the first electrode and interposed between the oxide semiconductor layer and the first electrode; and
a second buffer layer which is in contact with the oxide semiconductor layer and the second electrode and interposed between the oxide semiconductor layer and the second electrode,
wherein the first buffer layer and the second buffer layer include indium, gallium, zinc, oxygen, and nitrogen.
2. The thin film transistor according to claim 1 , wherein a proportion (N/O) of nitrogen (N) to oxygen (O) included in the buffer layers is greater than or equal to 5 at. % and less than or equal to 80 at. %.
3. The thin film transistor according to claim 1 , wherein the oxide semiconductor layer contains indium, gallium, and zinc.
4. A thin film transistor comprising:
a gate electrode;
a gate insulating film which covers the gate electrode;
a first electrode and a second electrode, an end portion of the first electrode and an end portion of the second electrode overlapping with the gate electrode with the gate insulating film interposed therebetween;
a first buffer layer over the first electrode;
a second buffer layer over the second electrode; and
an oxide semiconductor layer which overlaps with the end portion of the first electrode and the end portion of the second electrode,
wherein the oxide semiconductor layer is in contact with side surfaces of the first electrode and the second electrode and top surfaces and side surfaces of the first buffer layer and the second buffer layer; and
wherein the first buffer layer and the second buffer layer contain indium, gallium, zinc, oxygen, and nitrogen.
5. The thin film transistor according to claim 4 , wherein a proportion (N/O) of nitrogen (N) to oxygen (O) included in the buffer layers is greater than or equal to 5 at. % and less than or equal to 80 at. %.
6. The thin film transistor according to claim 4 , wherein the oxide semiconductor layer contains indium, gallium, and zinc.
7. A semiconductor device comprising a thin film transistor, the thin film transistor comprising:
a gate electrode;
a gate insulating film which covers the gate electrode;
an oxide semiconductor layer which overlaps with the gate electrode with the gate insulating film interposed therebetween;
a first electrode and a second electrode over the oxide semiconductor layer, an end portion of the first electrode and an end portion of the second electrode overlapping with the gate electrode;
a first buffer layer which is in contact with the oxide semiconductor layer and the first electrode and interposed between the oxide semiconductor layer and the first electrode; and
a second buffer layer which is in contact with the oxide semiconductor layer and the second electrode and interposed between the oxide semiconductor layer and the second electrode,
wherein the first buffer layer and the second buffer layer include indium, gallium, zinc, oxygen, and nitrogen.
8. The semiconductor device according to claim 7 , wherein a proportion (N/O) of nitrogen (N) to oxygen (O) included in the buffer layers is greater than or equal to 5 at. % and less than or equal to 80 at. %.
9. The semiconductor device according to claim 7 , wherein the oxide semiconductor layer contains indium, gallium, and zinc.
10. A semiconductor device comprising a thin film transistor, the thin film transistor comprising:
a gate electrode;
a gate insulating film which covers the gate electrode;
a first electrode and a second electrode, an end portion of the first electrode and an end portion of the second electrode overlapping with the gate electrode with the gate insulating film interposed therebetween;
a first buffer layer over the first electrode;
a second buffer layer over the second electrode; and
an oxide semiconductor layer which overlaps with the end portion of the first electrode and the end portion of the second electrode,
wherein the oxide semiconductor layer is in contact with side surfaces of the first electrode and the second electrode and top surfaces and side surfaces of the first buffer layer and the second buffer layer; and
wherein the first buffer layer and the second buffer layer contain indium, gallium, zinc, oxygen, and nitrogen.
11. The semiconductor device according to claim 10 , wherein a proportion (N/O) of nitrogen (N) to oxygen (O) included in the buffer layers is greater than or equal to 5 at. % and less than or equal to 80 at. %.
12. The semiconductor device according to claim 10 , wherein the oxide semiconductor layer contains indium, gallium, and zinc.