Electronic device with capcitively coupled floating buried layer
Transistors ( 21, 41 ) employing floating buried layers (BL) ( 72 ) may exhibit transient breakdown voltage (BVdss) TR significantly less than (BVdss) DC . It is found that this occurs because the floating BL ( 72 ) fails to rapidly follow the applied transient, causing the local electric field within the device to temporarily exceed avalanche conditions. (BVdss) TR of such transistors ( 69. 69′ ) can be improved to equal or exceed (BVdss) DC by including a charge pump capacitance ( 94, 94′ ) coupling the floating BL ( 72 ) to whichever high-side terminal ( 28, 47 ) receives the transient. The charge pump capacitance ( 94, 94′ ) may be external to the transistor ( 69, 69′ ), may be formed on the device surface ( 71 ) or, may be formed internally to the transistor ( 69 - 3, 69′ - 3 ) using a dielectric deep trench isolation wall ( 100 ) separating DC isolated sinker regions ( 86, 88 ) extending to the BL ( 72 ). The improvement is particularly useful for LDMOS devices.
1. An electronic device, comprising:
an MOS transistor having current carrying terminals including a source and a drain in a semiconductor containing body having an upper surface;
a DC isolated buried layer underlying the MOS transistor;
a sinker region in ohmic contact with the DC isolated buried layer; and
a charge pump capacitance coupled between one of the current carrying terminals and the sinker region.
2. The electronic device of claim 1 , wherein the MOS transistor is an N channel transistor and the DC isolated buried layer is N type.
3. The electronic device of claim 1 , wherein the MOS transistor is a P channel transistor and the DC isolated buried layer is N type.
4. The electronic device of claim 1 , wherein the charge pump capacitance is external to the MOS transistor.
5. The electronic device of claim 1 , wherein the charge pump capacitance is formed over the upper surface.
6. The electronic device of claim 5 , wherein the charge pump capacitance is a deposited capacitance.
7. The electronic device of claim 1 , further comprising a monolithic capacitance formed over the sinker region and providing at least portion of the charge pump capacitance.
8. The electronic device of claim 7 , wherein the monolithic capacitance comprises:
an electrically conductive layer coupled to one of the source and drain; and
an interlayer dielectric disposed between the electrically conductive layer and the sinker region.
9. An electronic device, comprising:
a MOS transistor having current carrying terminals including a source and a drain in a semiconductor containing body having an upper surface;
a DC isolated buried layer underlying the MOS transistor; and
a charge pump capacitance coupled between one of the current carrying terminals and the DC isolated buried layer, the charge pump capacitance formed under the upper surface and comprising a dielectric trench isolation wall penetrating substantially from the upper surface through the DC isolated buried layer underlying the MOS transistor.
10. The electronic device of claim 9 , wherein the dielectric trench isolation wall has a first sinker region on a first side thereof facing toward the MOS transistor and a second sinker region on a second side thereof facing away from the MOS transistor, wherein the first sinker region is Ohmically coupled to the DC isolated buried layer and the second sinker region is Ohmically coupled to one of the source and drain of the MOS transistor and the first and second sinker regions are DC isolated from each other by the dielectric trench isolation wall.
11. The electronic device of claim 10 , wherein the MOS transistor is an LDMOS transistor.
12. The electronic device of claim 9 , further comprising a first sinker region in ohmic contact with the DC isolated buried layer and adjacent the dielectric trench isolation wall.
13. The electronic device of claim 12 , further comprising a second sinker region formed in ohmic contact with the buried layer and separated from the first sinker region by the dielectric trench isolation wall.
14. The electronic device of claim 12 , further comprising:
a sinker region contact in ohmic contact with the first sinker region and electrically coupled to one of the source and drain;
a source or drain (S/D) contact electrically coupled to one of the source and drain; and
an isolation feature formed between the sinker region contact and the S/D contact.
15. The electronic device of claim 14 , wherein the sinker region contact is electrically coupled to one of the source and drain, and wherein the S/D contact is electrically coupled to the other of the source and drain.
16. An LDMOS transistor, comprising:
a buried layer;
a further SC region overlying the buried layer and having an upper surface;
a MOSFET formed in the further SC region, wherein the MOSFET comprises:
a body region having therein a source region of the MOSFET, and
a carrier drift region laterally separated from the body region and having therein a drain region of the MOSFET; and
a charge pump capacitance coupled between the buried layer region and one of the drain region and the source region of the MOSFET, the charge pump capacitance having a capacitance value adapted to pump charge into the buried layer in response to a fast voltage transient voltage applied between the source and drain so as to temporarily raise a voltage of the buried layer by at least 5% of the magnitude of fast voltage transient voltage.
17. The LDMOS transistor of claim 16 , wherein the charge pump capacitance is formed substantially over the upper surface.
18. The LDMOS transistor of claim 16 , wherein the charge pump capacitance is formed substantially on the upper surface.
19. The LDMOS transistor of claim 16 , wherein the charge pump capacitance is formed substantially beneath the upper surface.
20. The LDMOS transistor of claim 16 , wherein the charge pump capacitance has a capacitance value adapted to pump charge into the buried layer in response to a fast voltage transient applied between the source and drain so as to temporarily raise the voltage of the buried layer by at least 10% of the magnitude of fast voltage transient voltage.