Low resistance through-wafer via
The present invention provides a wafer ( 3 ) comprising a through-wafer via ( 7 ) through the wafer ( 3 ) formed by a through-wafer via hole ( 9 ) and at least a first conductive coating ( 25 ). A substantially vertical sidewall ( 11 ) of the through-wafer via hole ( 9 ) except for a constriction ( 23 ) provides a reliable through-wafer via ( 7 ) occupying a small area on the wafer. The wafer ( 3 ) is preferably made of a semiconductor material, such as silicon, or a glass ceramic. A method for manufacturing such a wafer ( 3 ) is described.
1. A wafer comprising a through-wafer via from an upper side to a lower side of the wafer,
wherein the through-wafer via comprises a through-wafer via hole having a sidewall at least partly covered with a first conductive coating,
wherein the through-wafer via hole comprises at least a first portion with a substantially vertical sidewall and a second portion that forms a constriction with at least an upper sloping sidewall widening out towards an upper side in the through-wafer via hole, and
wherein the second portion is arranged in between the first portion and a third portion of the sidewall, the third portion having a substantially vertical sidewall.
2. The wafer according to claim 1 , wherein the constriction further comprises a lower sloping sidewall widening out towards a lower side in the through-wafer via hole.
3. The wafer according to claim 2 , wherein an intersection of the upper and lower sloping sidewalls of the constriction is smoothly rounded.
4. The wafer according to claim 1 , wherein the wafer comprises a crystalline semiconductor material.
5. The wafer according to claim 1 , wherein the wafer is made of glass ceramic.
6. The wafer according to claim 1 , wherein a second conductive coating at least partly covers the first conductive coating.
7. The wafer according to claim 1 , wherein the wafer further comprises a plurality of through-wafer vias, wherein at least one through-wafer via is sealed and at least one through-wafer via is open.
8. The wafer according to claim 1 , wherein the wafer further comprises at least two groups of through-wafer vias arranged in sequence along a line, with each through-wafer via within each group displaced away from the line relative to a preceding through-wafer via in a stepwise manner.
9. An electronic device comprising a wafer according to claim 1 .
10. The electronic device according to claim 9 , wherein the electronic device comprises a stack of wafers, each wafer comprising a through-wafer via configured to connect to a through-wafer via of an adjacent wafer.
11. A method for manufacturing a wafer comprising a through-wafer via extending from an upper side to a lower side of the wafer, wherein the through-wafer via comprises a through-wafer via hole having a sidewall at least partly covered with a first conductive coating, wherein the through-wafer via hole comprises at least a first portion with a substantially vertical sidewall and a second portion forms a constriction with at least an upper sloping sidewall widening out towards an upper side in the through-wafer via hole, and wherein the second portion is arranged in between the portion a third portion of the sidewall, the third portion having a substantially vertical sidewall, the method comprising the steps of:
defining at least a first sloping sidewall in the wafer;
forming the through-wafer via hole, wherein the upper sloping sidewall of the constriction replicates the first sloping sidewall; and
depositing at least the first conductive coating on the sidewall of the through-wafer via hole.
12. The method according to claim 11 , further comprising a step of defining a second sloping sidewall in the wafer, wherein, in the step of forming the through-wafer via hole, a lower sloping sidewall of the constriction replicates the second sloping sidewall.
13. The method according to claim 11 , wherein the step of forming the through-wafer via hole comprises anisotropic etching.
14. The method according to claim 11 , wherein the step of defining at least the first sloping sidewall comprises forming a first recess comprising the first sloping sidewall on the upper side of the wafer by etching.
15. The method according to claim 12 , wherein the step of defining the second sloping sidewall comprises forming a second recess comprising the second sloping sidewall on the lower side of the wafer by etching.
16. The method according to 11 , wherein the step of forming the through-wafer via hole comprises two-way etching from the upper and lower sides to form the third portion of the through-wafer via hole having a substantially vertical sidewall.
17. The method according to claim 11 , wherein the step of defining at least the first sloping sidewall further comprises defining a second sloping sidewall in the sidewall of the through-wafer via hole, wherein, in the step of forming the through-wafer via hole, a lower sloping sidewall of the constriction replicates the second sloping sidewall.
18. The method according to claim 11 , wherein the step of defining at least the first sloping sidewall comprises exposing the wafer to light in a region corresponding to the through-wafer via hole and the step of forming the through-wafer via hole comprises etching an exposed region.
19. The method according to claim 11 , further comprising a step of depositing a second conductive coating on the first conductive coating.