Method for manufacturing semiconductor device
View Patent ↗An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks. In a method for manufacturing a semiconductor device including a channel-etched inverted-stagger thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. The etching step is performed by wet etching in which an etching solution is used.
1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode layer over a substrate having an insulating surface;
stacking a gate insulating layer, an oxide semiconductor film, and a conductive film over the gate electrode layer;
forming a first mask layer over the gate insulating layer, the oxide semiconductor film, and the conductive film;
etching the oxide semiconductor film and the conductive film with the use of the first mask layer to form an oxide semiconductor layer and a conductive layer in a first etching step;
forming a second mask layer by etching the first mask layer; and
etching the oxide semiconductor layer and the conductive layer with the use of the second mask layer to form an oxide semiconductor layer having a depression, a source electrode layer, and a drain electrode layer in a second etching step,
wherein the first mask layer is formed using a light-exposure mask,
wherein wet etching in which an etching solution is used is employed in each of the first etching step and the second etching step,
wherein the oxide semiconductor layer having the depression includes a region with a smaller thickness than a region overlapping with the source electrode layer or the drain electrode layer, and
wherein an end portion of the oxide semiconductor layer having the depression has a curved surface.
2. The method for manufacturing the semiconductor device according to claim 1 , wherein the oxide semiconductor film includes indium, gallium, and zinc.
3. The method for manufacturing the semiconductor device according to claim 1 , wherein in the second etching step, the conductive layer is etched using an ammonia hydrogen peroxide mixture as the etching solution and the oxide semiconductor layer is etched using a mixed solution of phosphoric acid, acetic acid, and nitric acid as the etching solution.
4. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode layer over a substrate having an insulating surface;
stacking a gate insulating layer, a first oxide semiconductor film, a second oxide semiconductor film, and a conductive film over the gate electrode layer;
forming a first mask layer over the gate insulating layer, the first oxide semiconductor film, the second oxide semiconductor film, and the conductive film;
forming a first oxide semiconductor layer, a second oxide semiconductor layer, and a conductive layer by etching the first oxide semiconductor film, the second oxide semiconductor film, and the conductive film with the use of the first mask layer in a first etching step;
forming a second mask layer by etching the first mask layer; and
forming an oxide semiconductor layer having a depression, a source region, a drain region, a source electrode layer, and a drain electrode layer by etching the first oxide semiconductor layer, the second oxide semiconductor layer, and the conductive layer with the use of the second mask layer in a second etching step,
wherein the first mask layer is formed using a light-exposure mask,
wherein wet etching in which an etching solution is used is employed in each of the first etching step and the second etching step,
wherein the oxide semiconductor layer having the depression includes a region with a smaller thickness than a region overlapping with the source region or the drain region, and
wherein an end portion of the oxide semiconductor layer having the depression has a curved surface.
5. The method for manufacturing the semiconductor device according to claim 4 , wherein the first oxide semiconductor film and the second oxide semiconductor film include indium, gallium, and zinc.
6. The method for manufacturing the semiconductor device according to claim 4 , wherein the first oxide semiconductor film has lower electrical conductivity than the second oxide semiconductor film.
7. The method for manufacturing the semiconductor device according to claim 1 or 4 , wherein a mixed solution of phosphoric acid, acetic acid, and nitric acid is used as the etching solution in the first etching step.
8. The method for manufacturing the semiconductor device according to claim 1 or 4 , wherein an ammonia hydrogen peroxide mixture is used as the etching solution in the second etching step.
9. The method for manufacturing the semiconductor device according to claim 4 , wherein in the second etching step, the conductive layer is etched using an ammonia hydrogen peroxide mixture as the etching solution and the first oxide semiconductor layer and the second oxide semiconductor layer are etched using a mixed solution of phosphoric acid, acetic acid, and nitric acid as the etching solution.
10. The method for manufacturing the semiconductor device according to claim 1 or 4 , wherein a multi-tone mask is used as the light-exposure mask.
11. The method for manufacturing the semiconductor device according to claim 1 or 4 , wherein a half-tone mask or a gray-tone mask is used as the light-exposure mask.
12. The method for manufacturing the semiconductor device according to claim 1 or 4 , further comprising:
performing an oxygen radical treatment on the oxide semiconductor layer having the depression.
13. The method for manufacturing the semiconductor device according to claim 12 , wherein the oxygen radical treatment is performed in an atmosphere of O 2 or N 2 O.
14. The method for manufacturing the semiconductor device according to claim 12 , wherein the oxygen radical treatment is performed with no bias voltage applied to a substrate side.