Shadow masks for patterned deposition on substrates
A shadow mask for patterning a substrate during a semiconductor process. In one implementation, a method for performing a Physical vapor deposition (PVD) on a substrate is provided. The method includes placing a substrate on a susceptor disposed below one or more PVD guns and below a plasma shield assembly having an aperture piece comprising a bellows and a shadow mask coupled to a bottom side of the bellows, the aperture piece detachably coupled to the plasma shield assembly, wherein a region defined between sides of the bellows is smaller than a width of the substrate. The method includes lowering the bellows toward the substrate to place the shadow mask in contact with the substrate and depositing a material on an isolated region on the substrate through the shadow mask.
1. A method for performing a Physical vapor deposition (PVD) on a substrate, comprising:
placing a substrate on a susceptor disposed below one or more PVD guns and below a plasma shield assembly having an aperture piece comprising a bellows and a shadow mask coupled to a bottom side of the bellows, the aperture piece detachably coupled to the plasma shield assembly, wherein a region defined between sides of the bellows is smaller than a width of the substrate;
lowering the bellows toward the substrate to place the shadow mask in contact with the substrate; and
depositing a material on an isolated region on the substrate through the shadow mask.
2. The method of claim 1 , wherein the shadow mask comprises:
a plate having a plurality of openings; and
a layer having openings in shapes of features patterned on the substrate, wherein the layer is coupled to a bottom surface of the plate by an epoxy.
3. The method of claim 2 , further comprising aligning the openings with the features patterned on the substrate.
4. The method of claim 1 , wherein the susceptor comprises an electrostatic chuck.
5. The method of claim 1 , wherein the shadow mask comprises a window in a shape of the isolated region on the substrate.
6. The method of claim 5 , further comprising:
raising the bellows away from the substrate;
rotating the susceptor such that the window is aligned to a new isolated region on the substrate;
lowering the bellows toward the substrate to place the shadow mask in contact with the new isolated region; and
depositing a material on the new isolated region through the shadow mask.
7. The method of clam 1 , wherein the isolated region is an individual die on the substrate.
8. The method of claim 1 , wherein the isolated region is a field of individual dies on the substrate.