Semiconductor light-emitting devices for generating arbitrary color
A light-emitting device includes a conductive substrate ( 320 ), a multilayer semiconductor structure situated above the conductive substrate including a n-type doped semiconductor layer ( 308 ), a p-type doped semiconductor layer ( 312 ) situated above the n-type doped semiconductor layer ( 308 ), and a MQW active layer ( 310 ) situated between the p-type and n-type doped semiconductor layer ( 308,312 ). The multilayer semiconductor structure is divided by grooves ( 300 ) to form a plurality of independent light-emitting mesas ( 304,306 ). At least one light-emitting mesa ( 304,306 ) comprises a color conversion layer ( 324,326 ).
1. A semiconductor light-emitting device, comprising:
a conductive substrate;
a multilayer semiconductor structure situated above the conductive substrate comprising:
a first doped semiconductor layer;
a second doped semiconductor layer situated above the first doped semiconductor layer; and
a multiple-quantum-well (MQW) active layer situated between the first and the second doped semiconductor layers;
wherein the multilayer semiconductor structure is divided by grooves to form a plurality of independent light-emitting mesas, wherein the light-emitting mesas have a common MQW;
wherein a first light-emitting mesa comprises a first color conversion layer configured to convert light emitted by the first light-emitting mesa to a first color;
wherein a second light-emitting mesa comprises a second color conversion layer configured to convert light emitted by the second light-emitting mesa to a second color that is different from the first color; and
wherein a first light-emission intensity of the first light-emitting mesa and a second light-emission intensity of the second light-emitting mesa are electrically controlled and are independent of each other, thereby allowing light emitted by the semiconductor light-emitting device to have an arbitrary color;
a first electrode coupled to the conductive substrate;
a plurality of electrodes coupled to the second doped semiconductor layer of the plurality of the light-emitting mesas, wherein the plurality of electrodes can be controlled independently.
2. The semiconductor light-emitting device of claim 1 ,
wherein the conductive substrate comprises at least one of the following materials:
Si,
GaAs,
GaP,
Cu, and
Cr.
3. The semiconductor light-emitting device of claim 1 ,
wherein the first doped semiconductor layer is a p-type doped semiconductor layer comprising GaN doped with Mg.
4. The semiconductor light-emitting device of claim 1 ,
wherein the second doped semiconductor layer is an n-type doped semiconductor layer comprising GaN doped with Si.
5. The semiconductor light-emitting device of claim 1 ,
wherein the MQW active layer comprises GaN and InGaN.
6. The semiconductor light-emitting device of claim 1 ,
wherein the first color conversion layer and/or the second color conversion layer comprise fluorescent powder.
7. The semiconductor light-emitting device of claim 1 ,
wherein the first color and/or the second color include at least one of: red, green, and blue.
8. A method for fabricating a semiconductor light-emitting device, the method comprising:
fabricating a multilayer semiconductor structure on a growth substrate patterned with grooves and mesas, wherein the multilayer semiconductor structure comprises a first doped semiconductor layer, a second doped semiconductor layer, and a multiple- quantum-wells (MQW) active layer;
wherein the multilayer semiconductor structure is divided by grooves to form a plurality of independent light-emitting mesas, wherein the light-emitting mesas have a common MQW;
forming a bonding layer above the multilayer semiconductor structure;
bonding the multilayer semiconductor structure to a conductive substrate;
removing the growth substrate;
forming a first color conversion layer on a first light-emitting mesa, wherein the first color conversion layer is configured to convert light emitted by the first light-emitting mesa to a first color; and
forming a second color conversion layer on a second light- emitting mesa, wherein the second color conversion layer is configured to convert light emitted by the second light-emitting mesa to a second color that is different from the first color;
wherein a first light-emission intensity of the first light-emitting mesa and a second light-emission intensity of the second light-emitting mesa are electrically controlled and are independent of each other, thereby allowing light emitted by the semiconductor light-emitting device to have an arbitrary color;
forming a first electrode coupled to the conductive substrate; forming a plurality of electrodes coupled to the second doped semiconductor layer of the plurality of the light-emitting mesas, wherein the plurality of electrodes can be controlled independently.
9. The method of claim 8 ,
wherein the conductive substrate comprises at least one of the following materials:
Si,
GaAs,
GaP,
Cu, and
Cr.
10. The method of claim 8 ,
wherein the first doped semiconductor layer is a p-type doped semiconductor layer comprising GaN doped with Mg.
11. The method of claim 8 ,
wherein the second doped semiconductor layer is an n-type doped semiconductor layer comprising GaN doped with Si.
12. The method of claim 8 ,
wherein the MQW active layer comprises GaN and InGaN.
13. The method of claim 8 ,
wherein the first color conversion layer and/or the second color conversion layer comprises fluorescent powder.
14. The method of claim 13 ,
wherein the first color and/or the second color include at least one of: red, green, and blue.