Vertical semiconductor light emitting device including a capacitor
A light emitting device is provided. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first dielectric layer over a part of an upper surface of the light emitting structure, and a pad electrode over the first dielectric layer.
1. A light emitting device, comprising:
a light emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
a dielectric layer on a part of an upper surface of the light emitting structure and on a side of the light emitting structure;
a pad electrode over the dielectric layer and
a first electrode layer under the light emitting structure,
wherein at least a portion of the first electrode layer is connected to the dielectric layer.
2. The light emitting device according to claim 1 , further comprising a second electrode over the light emitting structure.
3. The light emitting device according to claim 2 , wherein the pad electrode and the second electrode are electrically connected to each other.
4. The light emitting device according to claim 1 , further comprising a CBL within the second electrode layer.
5. The light emitting device according to claim 4 , further comprising a second electrode, wherein at least a part of the CBL is overlapped with the second electrode vertically.
6. The light emitting device according to claim 1 , further comprising a protection member circumferentially under the light emitting structure.
7. The light emitting device according to claim 6 , wherein the protection member is formed with electric insulative material or material forming a Schottky connection with the second conductive semiconductor layer.
8. A light emitting device package, comprising:
a package body;
a light emitting device of claim 1 arranged on the package body; and
an electrode electrically connecting the package body and the light emitting device.
9. A lighting system comprising a light emitting module unit provided with a light emitting device package of claim 8 .
10. The light emitting device according to claim 1 ,
wherein the dielectric layer comprises a second dielectric layer on the part of an upper surface of the light emitting structure and a first dielectric layer on the side of the light emitting structure,
wherein the pad electrode is on the second dielectric layer,
wherein the first dielectric layer and the second dielectric layer are connected to each other, and
wherein the first electrode layer is contacted with the first dielectric layer.
11. The light emitting device according to claim 10 , wherein the pad electrode, the second dielectric layer, and the light emitting structure function as a Metal Insulator Semiconductor (MIS) capacitor.
12. The light emitting device according to claim 10 , wherein a current does not flow under the pad electrode due to existence of the second dielectric layer and the current is diffused to other regions.
13. The light emitting device according to claim 12 , wherein the second dielectric layer acts as a Current Blocking Layer (CBL) when a voltage is supplied.