Alpha shielding techniques and configurations

1. An apparatus, comprising:

a semiconductor die having a plurality of integrated circuit devices;

an interconnect layer disposed on the semiconductor die;

a pad structure electrically coupled to at least one integrated circuit device of the plurality of integrated circuit devices via the interconnect layer;

an electrically insulative layer disposed on the interconnect layer;

a first shielding structure disposed within the electrically insulative layer, the first shielding structure further being electrically coupled to the pad structure;

an under-ball metallization (UBM) structure electrically coupled to the first shielding structure; and

a solder bump electrically coupled to the UBM structure, the solder bump comprising a solder bump material capable of emitting alpha particles, wherein the first shielding structure is positioned between the solder bump and the plurality of integrated circuit devices to shield the plurality of integrated circuit devices from the alpha particles emitted from the solder bump material.

2. The apparatus of claim 1 , wherein the first shielding structure further functions to redistribute power between the solder bump and other solder bumps.

3. The apparatus of claim 1 , wherein the electrically insulative layer comprises polyimide, the electrically insulative layer having a thickness between about 7 to about 15 microns; and

wherein the first shielding structure comprises at least one of copper, aluminum, nickel, titanium, and tungsten, the first shielding structure having a thickness between about 3 microns to about 10 microns.

4. The apparatus of claim 1 , wherein the first shielding structure comprises a length that is greater than a diameter of the solder bump.

5. The apparatus of claim 1 , further comprising a second shielding structure coupled to a surface of the electrically insulative layer proximal to the solder bump, wherein the second shielding structure is electrically isolated from the solder bump, and wherein the second shielding structure is positioned to shield the plurality of integrated circuit devices from the alpha particles emitted from the solder bump material.

6. The apparatus of claim 5 , further comprising:

a package substrate electrically coupled to the plurality of integrated circuit devices via the solder bump; and

an underfill material used to facilitate electrical isolation of the second shielding structure from the solder bump.

7. The apparatus of claim 5 , wherein the second shielding structure occupies a plane that is substantially parallel with a surface of the UBM structure, the second shielding structure comprising at least one of copper, aluminum, nickel, titanium, and tungsten, and the second shielding structure having a thickness between about 3 to about 10 microns.

8. The apparatus of claim 5 , wherein the second shielding structure is positioned relative to the first shielding structure to substantially block the alpha particles emitted from the solder bump material from reaching the plurality of integrated circuit devices by at least one of the first shielding structure and the second shielding structure.

9. The apparatus of claim 1 , wherein the plurality of integrated circuit devices comprise memory cells.

10. The apparatus of claim 1 , wherein the solder bump material comprises at least one of lead (Pb) and tin (Sn), the solder bump material having an alpha particle flux greater than about

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