Method for manufacturing a gallium nitride based semiconductor device with improved termination scheme

1. A method for manufacturing a gallium nitride based semiconductor power device disposed in a semiconductor substrate comprising:

opening at least a trench at a peripheral area of the semiconductor power device and growing a doped gallium nitride based epitaxial layer in the trench to function as guard ring constituting a termination structure for the gallium based semiconductor power device,

epitaxial growing an N-type GaN layer on top of an epitaxial grown N++ GaN layer; and

disposing a field plate on top of at least a portion of said guard ring for said termination structure.

2. The method of claim 1 further comprising:

forming a Schottky diode in a main area of the semiconductor power device and growing a P-type gallium nitride based epitaxial layer in the trench to form the guard ring as a P-type guard ring.

3. The method of claim 2 further comprising:

etching a plurality of junction barrier Schottky (JBS) trenches in a main area of the semiconductor power device and growing P-type gallium nitride based epitaxial layer in the JBS trenches to function as a JBS P-type structure.

4. The method of claim 1 further comprising:

planarizing the top of the doped gallium nitride based epitaxial layer after growing the gallium nitride based epitaxial layer in the trench.

5. The method of claim 1 wherein:

said step of growing the doped gallium based epitaxial layer in the trench further comprises a step of growing a P-type gallium nitride based epitaxial layer in the trench.

6. The method of claim 1 further comprising:

epitaxial growing an N-type GaN layer on top of an epitaxial grown N++ GaN layer;

electrically connecting an anode with the N type GaN layer and a cathode with the N++ GaN layer to function as a gallium based diode; wherein

said step of opening the trench in the peripheral area is a step of opening the trench in the peripheral area of the said N-type GaN layer and filling in said trench with a P-type gallium nitride based semiconductor epitaxial layer to function as a guard ring for the gallitim nitride based diode.

7. The method of claim 1 further comprising:

epitaxial growing an N-type GaN layer on top of an epitaxial grown N++ GaN layer;

depositing a Schottky metal layer on top of the N type GaN layer and electrically connecting a cathode with the N++ GaN layer to function as a gallium nitride based Schottky diode; wherein

said step of opening the trench in the peripheral area is a step of opening the trench in the peripheral area of the said N-type GaN layer about the Schottky area and filling in said trench with a P-type gallium nitride based semiconductor epitaxial layer to function as a guard ring for the gallium nitride based diode.

8. The method of claim 1 further comprising:

epitaxial growing a first gallium based semiconductor layer on top of an epitaxial grown second gallium based semiconductor layer with a different dopant concentration from said first gallium based semiconductor layer;

electrically connecting an anode with the first gallium based semiconductor layer and a cathode with the second gallium based semiconductor layer to function as a gallium based diode; wherein

said step of opening the trench in the peripheral area is a step of opening the trench in the peripheral area of the said first gallium based semiconductor layer and filling in said trench with a P-type gallium based semiconductor layer to function as a guard ring for the gallium based diode.

9. The method of claim 1 further comprising:

epitaxial growing a first gallium based semiconductor layer on top of an epitaxial grown second gallium based semiconductor layer with a different dopant concentration from said first gallium based semiconductor layer;

depositing a Schottky metal layer on top of the first gallium based semiconductor layer and electrically connecting a cathode with the second gallium based semiconductor layer to function as a gallium based Schottky diode; wherein

said step of opening the trench in the peripheral area is a step of opening the trench in the peripheral area of the said first gallium based semiconductor layer and epitaxially filling in said trench with a P-type gallium based semiconductor layer to function as a guard ring for the gallium based diode.

10. A method for manufacturing a gallium nitride based semiconductor power device disposed in a semiconductor substrate comprising:

opening at least a trench at a peripheral area of the semiconductor power device and growing a doped gallium nitride based epitaxial layer in the trench to function as guard ring constituting a termination structure for the gallium based semiconductor power device;

epitaxial growing an N-type GaN layer on top of an epitaxial grown N++ GaN layer;

depositing a Schottky metal layer on top of the N type GaN layer and electrically connecting a cathode with the N++ GaN layer; wherein

said step of opening the trench in the peripheral area is a step of opening the trench in the peripheral area of the said N-type GaN layer and also opening multiple junction barrier Schottky (JBS) trenches in the middle portion of the N type GaN layer under where the Schottky metal layer will be located and epitaxially filling in said trench and JBS trenches with P-type gallium nitride based semiconductor epitaxial layer followed by forming a Schottky metal layer on top of said JBS trenches; wherein said JBS trenches filled with said P-type gallium nitride based semiconductor epitaxial layer underneath said Schottky metal layer functioning as portions of a junction barrier Schottky (JBS) diode and said trench in the peripheral area filled with the gallium nitride based semiconductor epitaxial layer functioning as a guard ring for said JBS diode.

11. A method for manufacturing a gallium nitride based semiconductor power device disposed in a semiconductor substrate comprising:

opening at least a trench at a peripheral area of the semiconductor power device and growing a doped gallium nitride based epitaxial layer in the trench to function as guard ring constituting a termination structure for the gallium based semiconductor power device;

epitaxial growing an N-type GaN layer on top of an epitaxial grown N++ GaN layer;

epitaxial growing a first gallium based semiconductor layer on top of an epitaxial grown second gallium based semiconductor layer with a different dopant concentration from said first gallium based semiconductor layer;

depositing a Schottky metal layer on top of the first gallium based semiconductor layer and electrically connecting a cathode with the second gallium based semiconductor layer to function as a gallium based Schottky diode; wherein

said step of opening the trench in the peripheral area is a step of opening the trench in the peripheral area of the said first gallium based semiconductor layer and also opening multiple junction barrier Schottky JBS trenches in the middle portion of the first gallium based semiconductor layer and epitaxially filling in said trench and JBS trenches with a P-type gallium based semiconductor layer followed by forming a Schottky metal layer on top of said JBS trenches; wherein said JBS trenches filled with said P-type gallium based semiconductor layer underneath said Schottky metal layer functioning as portions of a junction barrier Schottky (JBS) diode and said trench in the peripheral area filled with the gallium based semiconductor layer functioning as a guard ring for said JBS diode.