Molecular self-assembly in substrate processing
Methods for sealing a porous dielectric are presented including: receiving a substrate, the substrate including the porous dielectric; exposing the substrate to an organosilane, where the organosilane includes a hydrolysable group for facilitating attachment with the porous dielectric, and where the organosilane does not include an alkyl group; and forming a layer as a result of the exposing to seal the porous dielectric. In some embodiments, methods are presented where the organosilane includes: alkynyl groups, aryl groups, fluoroalkyl groups, heteroaryl groups, alcohol groups, thiol groups, amine groups, thiocarbamate groups, ester groups, ether groups, sulfide groups, and nitrile groups. In some embodiments, method further include: removing contamination from the porous dielectric and a conductive region of the substrate prior to the exposing; and removing contamination from the conductive region after the forming.
1. A method for sealing a porous dielectric comprising:
receiving a substrate including the porous dielectric;
exposing the substrate to a C13H25SiCl3 compound comprising a polymerizable organosilane and a functional group for facilitating attachment with the porous dielectric; and
forming a layer as a result of the exposing.
2. The method of claim 1 , wherein the functional group comprises a halide.
3. The method of claim 1 , wherein the functional group comprises an amine to hydrolyze and to attach to the porous dielectric.
4. The method of claim 3 , wherein the C13H25SiCl3 compound comprising the polymerizable organosilane and the amine comprises (dimethylamino)silane.
5. The method of claim 3 , wherein the C13H25SiCl3 compound comprising the polymerizable organosilane and the amine comprises octadecyldimethyl(dimethylamino)silane.
6. The method of claim 1 wherein the C13H25SiCl3 compound further includes at least one linking group having the formula (CH2)n, where n is equal or greater than 0, and wherein n is selected to match a pore size of the porous dielectric.
7. The method of claim the method of claim 6 , wherein the pore size is between 11 and 50 Angstroms.
8. The method of claim 1 , further comprising post-processing the substrate to polymerize the C13H25SiCl3 compound.
9. The method of claim 8 , wherein the post-processing is chosen from the group consisting of: physical modifications, chemical modifications, electrical modifications, thermal modifications, magnetic modifications, photolytic modifications, cleaning, surface modification, surface preparation, deposition, dispensing, reaction, functionalization, etching, planarization, chemical mechanical planarization, electrochemical mechanical planarization, lithography, patterning, implantation, thermal treatment, infrared (IR) treatment, ultraviolet (UV) treatment, electron beam curing, x-ray treatment, vaporization, annealing, cross-linking, polymerizing, and oligomerizing.
10. The method of claim 1 , further comprising:
removing contamination from the porous dielectric and a conductive region of the substrate prior to the exposing; and
removing contamination from the conductive region after the forming.
11. The method of claim 1 , wherein the layer formed as the result of the exposing is a conformal thin film.