Domain wall motion element and magnetic random access memory
A domain wall motion element has a magnetic recording layer 10 that is formed of a ferromagnetic film and has a domain wall DW. The magnetic recording layer 10 has: a pair of end regions 11 - 1 and 11 - 2 whose magnetization directions are fixed; and a center region 12 sandwiched between the pair of end regions 11 - 1 and 11 - 2 , in which the domain wall. DW moves. A first trapping site TS 1 by which the domain wall DW is trapped is formed at a boundary between the end region 11 - 1, 11 - 2 and the center region 12 . Furthermore, at least one second trapping site TS 2 by which the domain wall DW is trapped is formed within the center region 12.
1. A domain wall motion element comprising a magnetic recording layer that is formed of a ferromagnetic film and has a domain wall,
wherein said magnetic recording layer comprises:
a pair of end regions whose magnetization directions are fixed; and
a center region sandwiched between said pair of end regions, in which said domain wall moves,
wherein a first trapping site by which said domain wall is trapped is formed at a boundary between said end region and said center region,
at least one second trapping site by which said domain wall is trapped is formed within said center region,
a potential difference for trapping said domain wall at said first trapping site is a first potential difference, and
a potential difference for trapping said domain wall at said second trapping site is a second potential difference that is smaller than said first potential difference.
2. The domain wall motion element according to claim 1 ,
wherein a number of said second trapping site within said center region is plural.
3. The domain wall motion element according to claim 1 , wherein said second trapping site is convexoconcave formed on a lateral face of said center region.
4. The domain wall motion element according to claim 1 , wherein said second trapping site is convexoconcave formed on a surface of said center region.
5. The domain wall motion element according to claim 1 , wherein said second trapping site is a crystal grain boundary in said ferromagnetic film in said center region.
6. The domain wall motion element according to claim 1 , wherein a film thickness of said magnetic recording layer at said first trapping site is larger on a side of said end region than on a side of said center region.
7. The domain wall motion element according to claim 1 , wherein an in-plane width of said magnetic recording layer at said first trapping site is larger on a side of said end region than on a side of said center region.
8. The domain wall motion element according to claim 1 , further comprising: a first magnetic film and a second magnetic film that are respectively adjacent to said pair of end regions,
wherein saturation magnetization or crystal magnetic anisotropy of said first magnetic film and said second magnetic film is different from that of said magnetic recording layer.
9. The domain wall motion element according to claim 1 , wherein flow of a current between said pair of end regions causes said domain wall to move to any of said at least one second trapping site or said first trapping site.
10. The domain wall motion element according to claim 9 , wherein a movement distance of said domain wall varies depending on a number of pulses of said current.
11. The domain wall motion element according to claim 9 , wherein a movement distance of said domain wall varies depending on a pulse width of said current.
12. The domain wall motion element according to claim 1 , further comprising: a magnetoresistance element whose resistance value varies depending on a magnetization state of said center region of said magnetic recording layer.
13. The domain wall motion element according to claim 12 ,
wherein said magnetoresistance element comprises:
said center region of said magnetic recording layer;
a magnetization fixed layer that is a ferromagnetic layer whose magnetization direction is fixed; and
a nonmagnetic layer sandwiched between said center region and said magnetization fixed layer,
wherein said magnetization fixed layer faces said center region across said nonmagnetic layer.
14. The domain wall motion element according to claim 12 ,
wherein said magnetoresistance element comprises:
a magnetization free layer that is a ferromagnetic layer;
a magnetization fixed layer that is a ferromagnetic layer whose magnetization direction is fixed; and
a nonmagnetic layer sandwiched between said magnetization free layer and said magnetization fixed layer,
wherein said magnetization free layer is magnetically coupled to said center region of said magnetic recording layer, and
a magnetization state of said magnetization free layer varies depending on the magnetization state of said center region.
15. A magnetic random access memory of a domain wall motion type comprising a plurality of memory cells that are arranged in an array form,
wherein each of said plurality of memory cells comprises a domain wall motion element,
wherein said domain wall motion element comprises a magnetic recording layer that is formed of a ferromagnetic film and has a domain wall,
wherein said magnetic recording layer comprises:
a pair of end regions whose magnetization directions are fixed; and
a center region sandwiched between said pair of end regions, in which said domain wall moves,
wherein a first trapping site by which said domain wall is trapped is formed at a boundary between said end region and said center region,
at least one second trapping site by which said domain wall is trapped is formed within said center region,
a potential difference for trapping said domain wall at said first trapping site is a first potential difference, and
a potential difference for trapping said domain wall at said second trapping site is a second potential difference that is smaller than said first potential difference.