Semiconductor memory device

1. A semiconductor memory device, comprising:

an output unit for outputting data in synchronization with clock signals; and

a data eye control unit for detecting phases of an internal clock and pulse signals corresponding to delay locked clocks as the clock signals, and controlling pulse widths of the clock signals based on the detection result so as to control a data eye of the data output by the output unit,

wherein the data eye control unit includes:

a delay tuning unit for synchronizing the internal clock with the pulse signals and outputting the synchronized internal clock and the synchronized pulse signals; and

a phase detector for detecting phases of the synchronized internal clock and the synchronized pulse signals which are outputted from the delay tuning unit, and outputting a phase detection result to the output unit so as to adjust pulse widths of the pulse signals.

2. The semiconductor memory device of claim 1 , further comprising:

a clock buffer for buffering an external clock, thereby generating the internal clock; and

a delay locked loop (DLL) circuit for performing a delay locking operation on the internal clock, thereby generating the delay locked clocks as the clock signals.

3. The semiconductor memory device of claim 1 , further comprising a pipe register for supplying the data to the output unit.

4. The semiconductor memory device of claim 2 , wherein the output unit includes:

a pulse generator for generating the pulse signals corresponding to the delay locked clocks in response to the phase detection result;

a pre driver for outputting the data in synchronization with the pulse signals; and

a main driver for outputting data corresponding to outputs of the pre driver.

5. The semiconductor memory device of claim 4 , wherein the delay locked clocks include a rising clock and a falling clock.

6. The semiconductor memory device of claim 1 , wherein the pulse generator adjusts pulse widths of the pulse signals according to the result of phase detection from the phase detector.

7. The semiconductor memory device of claim 1 , wherein the delay tuning unit comprises:

a first replica delay unit configured to delay the internal clock; and

a second replica delay unit configured to delay the pulse signals.

8. The semiconductor memory device of claim 7 , wherein the first replica delay unit delays the internal clock and the second replica delay unit delays the pulse signals to synchronize rising edges of the internal clock and the pulse signals to generate the synchronized internal clock and the synchronized pulse signals, respectively, wherein the output synchronized internal clock and the synchronized pulse signals are inverted prior to being output to the phase detector.

9. The semiconductor memory device of claim 8 , wherein the phase detector adjusts pulse widths of the pulse signals by detecting whether a pulse width of the synchronized pulse signals is bigger than half a pulse width of the synchronized internal clock and outputs the phase detection result at a logic low level when the pulse width of the synchronized pulse signals is bigger than half the pulse width of the synchronized internal clock.

10. A semiconductor memory device, comprising:

a clock buffer configured to receive and buffer an external clock, and generate an internal clock;

a delay locked loop (DLL) circuit configured to perform a delay locking operation on the internal clock, and generate delay locked clocks;

an output unit configured to output data in synchronization with the delay locked clocks; and

a data eye control unit configured to detect phases of the internal clock and the delay locked clocks, and control the delay locked clocks based on the detecting result so as to control a data eye of the data output by the output unit,

wherein the data eye control unit comprises:

a delay tuning unit configured to receive the internal clock and pulse signals corresponding to the delay locked clocks, synchronize the internal clock with the pulse signals, and output the synchronized internal clock and the synchronized pulse signals; and

a phase detector configured to receive the synchronized internal clock and the pulse signals which are outputted from the delay tuning unit, detect phases of the synchronized internal clock and the synchronized pulse signals, and output a phase detection result to the pulse generator so as to adjust pulse widths of the pulse signals.

11. The semiconductor memory device of claim 10 , wherein the output unit comprises:

a pulse generator configured to generate pulse signals corresponding to the delay locked clocks in response to the phase detection result;

a pre driver configured to output the data in synchronization with the pulse signals; and

a main driver configured to output data corresponding to outputs of the pre driver.

12. The semiconductor memory device of claim 10 , wherein the delay locked clocks include a rising clock and a falling clock.

13. The semiconductor memory device of claim 10 , wherein the delay tuning unit receives the pulse signals corresponding to the rising clock.

14. The semiconductor memory device of claim 10 , wherein the delay tuning unit comprises:

a first replica delay unit configured to delay the internal clock; and

a second replica delay unit configured to delay the pulse signals.

15. The semiconductor memory device of claim 14 , wherein the first replica delay unit delays the internal clock and the second replica delay unit delays the pulse signals to synchronize rising edges of the internal clock and the pulse signals to generate the synchronized internal clock and the synchronized pulse signals, respectively, wherein the output synchronized internal clock and the synchronized pulse signals are inverted prior to being output to the phase detector.

16. The semiconductor memory device of claim 15 , wherein the phase detector adjusts pulse widths of the pulse signals by detecting whether a pulse width of the synchronized pulse signals is bigger than half a pulse width of the synchronized internal clock and outputs the phase detection result at a logic low level when the pulse width of the synchronized pulse signals is bigger than half the pulse width of the synchronized internal clock.