Methods of forming a semiconductor device including a metal silicon nitride layer
Provided are methods of forming a semiconductor device. The methods include providing a first precursor and a substitute gas into a reaction chamber having a substrate therein, the first precursor having a first substituent and further providing a second precursor into the reaction chamber. Either the first precursor or the second precursor includes a metal element and the other includes a silicon element, at least one of the first substituents of the first precursor are substituted with the substitute gas, the first precursor substituted with the substitute gas is adsorbed onto the substrate, and the second precursor is reacted with the adsorbed first precursor.
1. A method of forming a semiconductor device comprising:
providing a first precursor and a substitute gas into a reaction chamber having a substrate therein, the first precursor having first substituents; and
providing a second precursor into the reaction chamber,
wherein either of the first precursor or the second precursor comprises a metal element and the other includes a silicon element, at least one of the first substituents of the first precursor are substituted with the substitute gas at a region spaced apart from the substrate, the first precursor substituted with the substitute gas is adsorbed onto the substrate, and the second precursor is reacted with the adsorbed first precursor, wherein the first substituent is NRR', wherein each of R and R′ is one selected from the group consisting of C n H 2n+1 , wherein n is an integral number in the range from 0 to 10, C n H 2n−1 , wherein n is an integral number in the range from 1 to 12, and —CH═C═CH 2 .
2. The method of claim 1 , wherein at least one of the first substituents is substituted with the substitute gas after adsorbing the first precursor on the substrate.
3. The method of claim 1 , wherein the first precursor and the substitute gas are simultaneously provided into the reaction chamber.
4. The method of claim 1 , wherein at least one of the first substituents is substituted with the substitute gas by transamination between the first precursor and the substitute gas.
5. The method of claim 1 , wherein the substitute gas is NR n H 3−n , or N 2 R n H 4−n , wherein n is an integral number in the range from 0 to 2.
6. The method of claim 1 , wherein the first substituents comprise the same amine group as the substitute gas.
7. The method of claim 1 , wherein the second precursor comprises a second substituent and the method further comprises:
providing a substitute gas into the reaction chamber; and
substituting the second substituent with the substitute gas.
8. A method of forming a semiconductor device comprising:
providing a first precursor having first substituents and a first substitute gas having a first amine group into a reaction chamber having a substrate;
substituting at least one of the first substitents with the first amine group;
adsorbing the first precursor having the first amine group on the substrate;
providing a second precursor having second substituents and a second substitute gas having a second amine group into the reaction chamber;
substituting at least one of second substitents with the second amine group; and
binding the second precursor having the second amine group to the first precursor having the first amine group on the substrate,
wherein either of the first precursor or the second precursor comprises a metal element and the other includes a silicon element.
9. The method of claim 8 , wherein at least one of the first substituents is substituted with the first amine group at a region spaced apart from the substrate.
10. The method of claim 8 , wherein the first substituents are substituted with the first amine group by transamination between the first precursor and the substitute gas.
11. The method of claim 10 , wherein the first substituents are NRR′, wherein each of R and R′ is one selected from the group consisting of C n H 2n+1 , wherein n is an integral number in the range from 0 to 10, C n H 2n−1 , wherein n is an integral number in the range from 1 to 12, and —CH═C═CH 2 .
12. The method of claim 10 , wherein the substitute gas is NR n H 3n−1 or N 2 R n H 4−n , wherein n is an integral number in the range from 0 to 2.
13. The method of claim 10 , wherein the first substituents comprise the same amine group as the substitute gas.
14. A method of forming a phase changeable memory device comprising:
forming a heating electrode on a substrate; and
forming a phase changeable layer on the heating electrode,
wherein forming the heating electrode includes
providing a first precursor having first substituents and a substitute gas into a reaction chamber having the substrate with the heating electrode; and
providing a second precursor into the reaction chamber,
wherein either of the first precursor or the second precursor comprises a metal element and the other includes a silicon element, at least one of the first substituents of the first precursor is substituted with the substitute gas at a region spaced apart from the substrate, the first precursor substituted with the substitute gas is adsorbed onto the substrate, and the second precursor is reacted with the adsorbed first precursor.