Display device having a buffer layer formed over a channel protective layer
A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film.
1. A manufacturing method of a display device, comprising the steps of:
forming a gate electrode over a substrate;
forming a gate insulating film over the gate electrode;
forming a microcrystalline semiconductor film over the gate insulating film, the microcrystalline semiconductor film including a channel formation region;
forming a channel protective layer over the channel formation region;
forming a buffer layer over the channel protective layer;
forming a source and drain regions over the buffer layer;
forming a source and drain electrodes over the source and drain regions; and
forming an impurity region by adding an impurity element which imparts one conductivity type selectively in the channel formation region of the microcrystalline semiconductor film, through the channel protective layer with a use of the source and drain electrodes as masks.
2. The manufacturing method of a display device according to claim 1 , after forming the impurity region, further comprising a step of irradiating the impurity region with a laser light through the channel protective layer.
3. The manufacturing method of a display device according to claim 1 , wherein the buffer layer is formed of an amorphous semiconductor film.
4. The manufacturing method of a display device according to claim 1 , wherein the impurity region is formed in the channel formation region of the microcrystalline semiconductor film between the source and drain electrodes.
5. The manufacturing method of a display device according to claim 1 , wherein the impurity element which imparts one conductivity type is an impurity element which imparts p-type conductivity.
6. A manufacturing method of a display device, comprising the steps of:
forming a gate electrode over a substrate;
forming a gate insulating film over the gate electrode;
forming a microcrystalline semiconductor film over the gate insulating film, the microcrystalline semiconductor film including a channel formation region;
forming a channel protective layer over the channel formation region;
forming a buffer layer over the channel protective layer;
forming a source and drain regions over the buffer layer;
forming a source and drain electrodes over the source and drain regions;
forming an impurity region by adding an impurity element which imparts one conductivity type selectively in the channel formation region of the microcrystalline semiconductor film, through the channel protective layer with a use of the source and drain electrodes as masks; and
forming a pixel electrode which is electrically connected to one of the source and drain electrodes.
7. The manufacturing method of a display device according to claim 6 , after forming the impurity region, further comprising a step of irradiating the impurity region with a laser light through the channel protective layer.
8. The manufacturing method of a display device according to claim 6 , wherein the buffer layer is formed of an amorphous semiconductor film.
9. The manufacturing method of a display device according to claim 6 , wherein the impurity region is formed in the channel formation region of the microcrystalline semiconductor film between the source and drain electrodes.
10. The manufacturing method of a display device according to claim 6 , wherein the impurity element which imparts one conductivity type is an impurity element which imparts p-type conductivity.