Phosphor, method for producing the same and light-emitting device using the same

1. A phosphor which comprises a phosphor material having a composition represented by a general formula: M(0) a M(1) b M(2) x−(vm+n) M(3) (vm+n)−y O n N z−n , wherein

M(0) is one or more elements selected from Li, Na, Be, Mg, Ca, Sr, Ba, Sc, Y, La, Gd, and Lu;

M(1) Eu;

M(2) is one or more elements selected from Si, Ge, Sn, Ti, Hf and Zr;

M(3) is one or more elements selected from Be, B, Al, Ga, In, Tl and Zn;

O is oxygen;

N is nitrogen; and

an atomic ratio of M(0), M(1), M(2), M(3), O and N is adjusted to satisfy the following:

x, y and z satisfy 33≦x≦51, 8≦y≦12 and 36≦z≦56;

a and b satisfy 3≦a+b≦7 and 0.001≦b≦1.2;

m and n satisfy 0.8 ·me≦m≦1.2 ·me and 0≦n≦7 in which me=a+b; and

v satisfies v={a·v(0)+b·v(1)}/(a+b), wherein v(0) is a valence of M(0) ion and v(1) is a valence of M(1) ion, and

wherein the phosphor emits 480 to 540-nm light.

2. The phosphor according to claim 1 , wherein x=42, y=10 and z=46.

3. The phosphor according to claim 1 , wherein M(0) is one or more elements selected from Ca, Sr and Ba.

4. The phosphor according to claim 1 , wherein M(2) is Si and M(3) is Al.

5. The phosphor according to claim 1 , wherein n≦me.

6. The phosphor according to claim 1 , wherein the content of the phosphor material is not less than 80% by volume and the remainder is one or more selected from β-sialon, unreacted silicon nitride or aluminum nitride, oxynitride glass, SrSiAl 2 N 2 O 3 , Sr 2 Al 2 Si 10 N 14 O 4 , SrSi (10−n) Al (18+n) O n N (32−n) (n˜1) and SrSi 6 N 8 .

7. The phosphor according to claim 1 , wherein a transparent film is formed at least partially on a surface of the phosphor and a thickness of the transparent film is (10 to 180 )/n k (nanometers) when the refractive index of the transparent film is n k .

8. A light-emitting device comprising a light emitting source and a phosphor, wherein the phosphor is the phosphor according to claim 1 .

9. The light-emitting device according to claim 8 , comprising a light emitting source and a phosphor, wherein the phosphor further comprises CaAlSiN 3 :Eu.

10. The light-emitting device according to claim 8 , wherein the light emitting source is one of a LED chip, an inorganic EL chip or an organic EL chip, each of which emits light at a wavelength of 330 to 500 nm.

11. The light-emitting device according to claim 8 , wherein the phosphor is dispersed in a sealing resin formed to surround the LED chip.

12. The light-emitting device according to claim 10 , wherein the phosphor is attached directly to the LED chip.

13. The light-emitting device according to claim 10 , wherein the light-emitting device comprises a plurality of LED chips.

14. The phosphor according to claim 1 , wherein, in powder X-ray diffraction measurement of the phosphor, at least one of the top five strongest diffraction lines selected from the X-ray diffraction pattern, has a diffraction angle (2θ) ranging from 25° to 27° .