Semiconductor device and method of manufacturing the same
View Patent ↗The present invention improves the aperture ratio of a pixel of a reflection-type display device or a reflection type display device without increasing the number of masks and without using a blackmask. A pixel electrode ( 167 ) is arranged so as to partially overlap a source wiring ( 137 ) for shielding the gap between pixels from light, and a thin film transistor is arranged so as to partially overlap a gate wiring ( 166 ) for shielding a channel region of the thin film transistor from light, thereby realizing a high pixel aperture ratio.
1. A semiconductor device comprising:
a pixel portion comprising:
a first wiring comprising a first conductive layer over a substrate;
a first gate electrode electrically connected to the first wiring, the first gate electrode comprising a second conductive layer over the substrate;
a second gate electrode electrically connected to the first wiring, the second gate electrode comprising a third conductive layer over the substrate;
a second wiring comprising a fourth conductive layer over the substrate, the second wiring being electrically connected to one of a source and a drain of a first transistor; and
a third wiring comprising a fifth conductive layer over the substrate, the third wiring being electrically connected to one of a source and a drain of a second transistor; and
a terminal portion comprising
a fourth wiring comprising a sixth conductive layer,
wherein a first channel formation region of the first transistor and the second conductive layer overlap with each other,
wherein a second channel formation region of the second transistor and the third conductive layer overlap with each other,
wherein the second conductive layer is in direct contact with the first conductive layer through a first contact hole,
wherein the third conductive layer is in direct contact with the first conductive layer through a second contact hole,
wherein the first conductive layer is over and overlapping the fourth conductive layer and the fifth conductive layer, and
wherein the sixth conductive layer and the first conductive layer comprise a same material.
2. The semiconductor device according to claim 1 ,
wherein the first gate electrode is over the first channel formation region, and
wherein the second gate electrode is over the second channel formation region.
3. The semiconductor device according to claim 1 ,
wherein the fourth conductive layer is electrically connected to the one of the source and the drain of the first transistor via a seventh conductive layer, and
wherein the fifth conductive layer electrically connected to the one of the source and the drain of the second transistor via an eighth conductive layer.
4. The semiconductor device according to claim 1 ,
wherein each of the first wiring and the fourth wiring further comprises two conductive layers.
5. The semiconductor device according to claim 1 ,
wherein the first transistor comprises a first semiconductor layer comprising the first channel formation region, and
wherein the second transistor comprises a second semiconductor layer comprising the second channel formation region.
6. A display device comprising:
a pixel portion comprising:
a first wiring comprising a first conductive layer over a substrate;
a first gate electrode electrically connected to the first wiring, the first gate electrode comprising a second conductive layer over the substrate;
a second gate electrode electrically connected to the first wiring, the second gate electrode comprising a third conductive layer over the substrate;
a second wiring comprising a fourth conductive layer over the substrate, the second wiring being electrically connected to one of a source and a drain of a first transistor;
a third wiring comprising a fifth conductive layer over the substrate, the third wiring being electrically connected to one of a source and a drain of a second transistor;
a first display element electrically connected to the other of the source and the drain of the first transistor; and
a second display element electrically connected to the other of the source and the drain of the second transistor, and
a terminal portion comprising
a fourth wiring comprising a sixth conductive layer,
wherein a first channel formation region of the first transistor and the second conductive layer overlap with each other,
wherein a second channel formation region of the second transistor and the third conductive layer overlap with each other,
wherein the second conductive layer is in direct contact with the first conductive layer through a first contact hole,
wherein the third conductive layer is in direct contact with the first conductive layer through a second contact hole, and
wherein the first conductive layer is over and overlapping the fourth conductive layer and the fifth conductive layer and
wherein the sixth conductive layer and the first conductive layer comprise a same material.
7. The display device according to claim 6 ,
wherein the first gate electrode is over the first channel formation region, and
wherein the second gate electrode is over the second channel formation region.
8. The display device according to claim 6 ,
wherein the fourth conductive layer is electrically connected to the one of the source and the drain of the first transistor via a seventh conductive layer, and
wherein the fifth conductive layer is electrically connected to the one of the source and the drain of the second transistor via an eighth conductive layer.
9. The display device according to claim 6 , wherein each of the first display element and the second display element comprises a liquid crystal material.
10. The display device according to claim 6 ,
wherein each of the first wiring and the fourth wiring further comprises two conductive layers.
11. The display device according to claim 6 ,
wherein the first transistor comprises a first semiconductor layer comprising the first channel formation region, and
wherein the second transistor comprises a second semiconductor layer comprising the second channel formation region.
12. The display device according to claim 6 ,
wherein the first display element is directly connected to the other of the source and the drain of the first transistor, and
wherein the second display element is directly connected to the other of the source and the drain of the second transistor.
13. A semiconductor device comprising:
a pixel portion comprising:
a first wiring comprising a first conductive layer over a substrate;
a first gate electrode electrically connected to the first wiring, the first gate electrode comprising a second conductive layer over the substrate;
a second gate electrode electrically connected to the first wiring, the second gate electrode comprising a third conductive layer over the substrate;
a second wiring comprising a fourth conductive layer over the substrate, the second wiring being electrically connected to one of a source and a drain of a first transistor; and
a third wiring comprising a fifth conductive layer over the substrate, the third wiring being electrically connected to one of a source and a drain of a second transistor; and
a terminal portion comprising:
a fourth wiring comprising a sixth conductive layer; and
a fifth wiring electrically connected to the fourth wiring, the
fifth wiring comprising a seventh conductive layer,
wherein a first channel formation region of the first transistor and the second conductive layer overlap with each other,
wherein a second channel formation region of the second transistor and the third conductive layer overlap with each other,
wherein the second conductive layer is in direct contact with the first conductive layer through a first contact hole,
wherein the third conductive layer is in direct contact with the first conductive layer through a second contact hole,
wherein the first conductive layer is over and overlapping the fourth conductive layer and the fifth conductive layer,
wherein the sixth conductive layer and the first conductive layer comprise a same first material, and
wherein the seventh conductive layer, the second conductive layer and the third conductive layer comprise a same second material.
14. The semiconductor device according to claim 13 ,
wherein the first gate electrode is over the first channel formation region, and
wherein the second gate electrode is over the second channel formation region.
15. The semiconductor device according to claim 13 ,
wherein each of the first wiring and the fourth wiring further comprises two conductive layers.
16. The semiconductor device according to claim 13 ,
wherein the first transistor comprises a first semiconductor layer comprising the first channel formation region, and
wherein the second transistor comprises a second semiconductor layer comprising the second channel formation region.
17. A display device comprising:
a pixel portion comprising:
a first wiring comprising a first conductive layer over a substrate;
a first gate electrode electrically connected to the first wiring, the first gate electrode comprising a second conductive layer over the substrate;
a second gate electrode electrically connected to the first wiring, the second gate electrode comprising a third conductive layer over the substrate;
a second wiring comprising a fourth conductive layer over the substrate, the second wiring being electrically connected to one of a source and a drain of a first transistor;
a third wiring comprising a fifth conductive layer over the substrate, the third wiring being electrically connected to one of a source and a drain of a second transistor;
a first display element electrically connected to the other of the source and the drain of the first transistor; and
a second display element electrically connected to the other of the source and the drain of the second transistor; and
a terminal portion comprising:
a fourth wiring comprising a sixth conductive layer; and
a fifth wiring electrically connected to the fourth wiring, the
second wiring comprising a seventh conductive layer,
wherein a first channel formation region of the first transistor and the second conductive layer semiconductor film overlap with each other,
wherein a second channel formation region of the second transistor and the third conductive layer overlap with each other,
wherein the second conductive layer is in direct contact with the first conductive layer through a first contact hole,
wherein the third conductive layer is in direct contact with the first conductive layer through a second contact hole,
wherein the first conductive layer is over and overlapping the fourth conductive layer and the fifth conductive layer,
wherein the sixth conductive layer and the first conductive layer comprise a same first material, and
wherein the seventh conductive layer, the second conductive layer and the third conductive layer comprise a same second material.
18. The display device according to claim 17 ,
wherein the first gate electrode is over the first channel formation region, and
wherein the second gate electrode is over the second channel formation region.
19. The display device according to claim 17 ,
wherein each of the first display element and the second display element comprises a liquid crystal material.
20. The display device according to claim 17 ,
wherein each of the first wiring and the fourth wiring further comprises two conductive layers.
21. The display device according to claim 17 ,
wherein the first transistor comprises a first semiconductor layer comprising the first channel formation region, and
wherein the second transistor comprises a second semiconductor layer comprising the second channel formation region.
22. The display device according to claim 17 ,
wherein the first display element is directly connected to the other of the source and the drain of the first transistor, and
wherein the second display element is directly connected to the other of the source and the drain of the second transistor.