Component arrangement including a MOS transistor having a field electrode

1. A component arrangement comprising:

a MOS transistor having a gate electrode;

a drift zone;

a field electrode, arranged adjacent to the drift zone and dielectrically insulated from the drift zone by a dielectric layer;

a charging circuit, having a rectifier element connected between the gate electrode and the field electrode,

wherein the MOS transistor is integrated in a semiconductor body, and the gate electrode and the field electrode are arranged in a common trench in the semiconductor body;

wherein the MOS transistor has a source zone, and the charging circuit has a capacitive storage element connected between the field electrode and the source zone; and

wherein the capacitive storage element is arranged in the trench.

2. The component arrangement of claim 1 , wherein the capacitive storage element has a first and a second electrode and a storage dielectric arranged between the first and second electrode.

3. The component arrangement of claim 2 , wherein the first electrode of the capacitive storage element is formed by the field electrode.

4. The component arrangement of claim 3 , wherein the second electrode of the capacitive storage element is arranged within the trench between the gate electrode and the field electrode.

5. The component arrangement of claim 1 , wherein the MOS transistor is a MOSFET.

6. The component arrangement of claim 1 , comprising wherein the MOS transistor is realized as an IGBT.

7. The component arrangement of claim 1 , in which the MOS transistor is realized as a vertical transistor, in which a current flow direction in the drift zone runs in a vertical direction of the semiconductor body.

8. The component arrangement of claim 1 , comprising wherein the MOS transistor is a lateral transistor, a current flow direction in the drift zone runs in a lateral direction of the semiconductor body.

9. The component arrangement of claim 1 , wherein the rectifier element is polarized in such a way that the field electrode, when the component is driven in the on state, is charged with a charge suitable for forming an accumulation channel in the drift zone.

10. An integrated circuit comprising:

a semiconductor body;

a MOS transistor having a gate electrode;

a drift zone;

a field electrode, arranged adjacent to the drift zone and dielectrically insulated from the drift zone by a dielectric layer;

a charging circuit, having a rectifier element connected between the gate electrode and the field electrode;

one or more additional electrical components;

wherein the MOS transistor is integrated in the semiconductor body, and the gate electrode and the field electrode are arranged in a common trench in the semiconductor body;

wherein the MOS transistor has a source zone, and the charging circuit has a capacitive storage element connected between the field electrode and the source zone; and

wherein the capacitive storage element is arranged in the trench.

11. The integrated circuit of claim 10 , wherein the capacitive storage element has a first and a second electrode and a storage dielectric arranged between the first and second electrode.

12. The integrated circuit of claim 11 , wherein the first electrode of the capacitive storage element is formed by the field electrode.