CMOSFET device with controlled threshold voltage characteristics and method of fabricating the same
There is provided a CMOSFET device with threshold voltage controlled by means of interface dipoles and a method of fabricating the same. A cap layer, for example a very thin layer of poly-silicon, amorphous silicon, or SiO 2 , is interposed inside high-k gate dielectric layers of the CMOSFET device, and the threshold voltage is adjusted by means of the interface dipoles formed by the cap layer inside the high-k gate dielectric layers. According to the present invention, it is possible to effectively optimize the threshold voltage of the CMOSFET device without significantly increasing EOT thereof.
1. A Complementary Metal-Oxide-Semiconductor Field
Effect Transistor (CMOSFET) device, comprising: a semiconductor substrate; an interface layer grown on the semiconductor substrate; a first high-k gate dielectric layer deposited on the interface layer; a cap layer deposited on the first high-k gate dielectric layer;
a second high-k gate dielectric layer deposited on a structure formed of the first high-k gate dielectric layer and the cap layer; and
a gate electrode layer deposited on a stack formed of the first high-k gate dielectric layer, the cap layer, and the second high-k gate dielectric layer, wherein the cap layer comprises poly-silicon, amorphous silicon, or SiO 2 , and interacts with the first and second high-k gate dielectric layers to create interface dipoles to adjust a threshold voltage of the CMOSFET device.
2. The CMOSFET device according to claim 1 , wherein the interface layer is formed of SiO 2 and has a thickness of about 0.3 nm-1 nm.
3. The CMOSFET device according to claim 1 , wherein the cap layer has a thickness of about 0.1 nm-5 nm.
4. The CMOSFET device according to claim 1 , wherein the first high-k gate dielectric layer comprises one or more high-k gate dielectric layers, and the second high-k gate dielectric layer comprises one or more high-k gate dielectric layers.
5. The CMOSFET device according to claim 1 , wherein the gate electrode layer comprises a one-layer gate electrode structure or a multi-layer gate electrode structure.
6. The CMOSFET device according to claim 1 , wherein the materials for the first and second high-k gate dielectric layers comprise at least one of HfO2, HfSiOx, HfZrO x , HfO 2 , HfSiO x , HfZrO x , HfON, HfSiON, HfAlO x , Al 2 O 3 , ZrO 2 , ZrSiO x , Ta 2 O 5 , La 2 O 3 , HfLaO x , LaAlO x , LaSiO x , Y 2 O 3 , AlN, nitrides of those materials, oxynitrides of those materials, oxides of other rare earth elements, nitrides of other rare earth elements, SiN x , SiON, and any combination thereof.
7. The CMOSFET device according to claim 1 , wherein the material for the gate electrode layer comprises at least one of TiN, TaN, MoN, HfN, TaAlN, TiAlN, MoAlN, HfAlN, TaYbN, TaErN, TaTbN, TaC, HfC, TaSiC, HfSiC, Pt, Ru, Ir, W, Mo, Re, RuO x , RuTa x , HfRu x , poly-silicon, metal silicides, and any combination thereof.
8. A method of fabricating a Complementary Metal-Oxide-Semiconductor Field Effect Transistor (CMOSFET) device, comprising: growing an interface layer on a semiconductor substrate; depositing a first high-k gate dielectric layer on the interface layer; depositing a cap layer on the first high-k gate dielectric layer;
depositing a second high-k gate dielectric layer on a structure formed of the first high-k gate dielectric layer and the cap layer; and
depositing a gate electrode layer on a stack formed of the first high-k gate dielectric layer, the cap layer, and the second high-k gate dielectric layer, wherein the cap layer comprises poly-silicon, amorphous silicon, or SiO, and interacts with the first and second high-k gate dielectric layers to create interface dipoles to adjust a threshold voltage of the CMOSFET device.
9. The method of fabricating the CMOSFET device
according to claim 8 , wherein the interface layer is formed of SiO 2 and has a thickness of about 0.3 nm-1 nm.
10. The method of fabricating the CMOSFET device according to claim 8 , wherein the first high-k gate dielectric layer comprises one or more high-k gate dielectric layers, and the second high-k gate dielectric layer comprises one or more high-k gate dielectric layers.
11. The method of fabricating the CMOSFET device according to claim 8 , wherein the gate electrode layer comprises a one-layer gate electrode structure or a multi-layer gate electrode structure.
12. The method of fabricating the CMOSFET device according to claim 8 , wherein the materials for the first and second high-k gate dielectric layers comprise at least one of HfO2, HfZrOx, HfSiOx, HfON, HfSiON, HfAlO x , Al 2 O 3 , ZrO 2 , ZrSiO x , Ta 2 O 5 , La 2 O 3 , HfLaO x , LaAl0 x , LaSiO x , Y 2 O 3 , AlN, nitrides of those materials, oxynitrides of those materials, oxides of other rare earth elements, nitrides of other rare earth elements, SiN x , SiON, and any combination thereof.
13. The method of fabricating the CMOSFET device according to claim 8 , wherein the materials for the gate electrode layer comprises at least one of TiN, TaN, MoN, HfN, TaAlN, TiAlN, MoAlN, HfAlN, TaYbN, TaErN, TaTbN, TaC, HfC, TaSiC, HfSiC, Pt, Ru, Ir, W, Mo, Re, RuO x , RuTa x , HfRu x , poly-silicon, metal silicides, and any combination thereof.
14. The method of fabricating the CMOSFET device according to claim 10 , wherein the cap layer is deposited by physical deposition, chemical vapor deposition, or atom layer deposition.
15. The method of fabricating the CMOSFET device according to claim 10 , wherein the cap layer has a thickness of about 0.1 nm-5 nm.