Method for manufacturing nitride semiconductor laser element

1. A method for manufacturing a nitride semiconductor laser element comprising:

(a) forming a nitride semiconductor layer on a substrate;

(b) forming a ridge on a surface of the nitride semiconductor;

(c) forming a first protective film on the nitride semiconductor layer including the ridge;

(d) removing the first protective film from at least a top face of the ridge;

(e) forming a conductive layer composed of a two or more of multilayer film with different compositions on the first protective film and the nitride semiconductor layer including the ridge, and introducing a plurality of gaps at locations of at least at the uppermost conductive layer corresponding to the base portion from the ridge shoulders; and

(f) removing part of the lowermost layer of the conductive layer, which is located on a part of the first protective film formed on a side face of the ridge, through the gaps to form a void defined by the first protective film and the conductive layer so that at least a part of a surface of the first protective film extending substantially parallel to the side face of the ridge is exposed to the void.

2. The method for manufacturing a nitride semiconductor laser element according to claim 1 , wherein

the forming the conductive layer includes forming a first conductive layer and a second conductive layer which has a different etching rate from the first conductive layer and is disposed on the first conductive layer.

3. The method for manufacturing a nitride semiconductor laser element according to claim 2 , wherein

the forming the conductive layer further includes forming a third conductive layer which has a different etching rate from the first conductive layer and the second conductive layer, and is disposed under the first conductive layer;

after the step (f), further forming a mask pattern on part of the nitride semiconductor layer, and the upper face and the side faces of the ridge to remove part of the third conductive layer using the mask pattern.

4. The method for manufacturing a nitride semiconductor laser element according to claim 2 , wherein

the forming the conductive layer further includes forming a third conductive layer which has a different etching rate from the first conductive layer and the second conductive layer, and is located under the first conductive layer;

in the step (f), further removing part of the first conductive layer to form the void;

after the step (f), further forming a mask pattern on a part of the nitride semiconductor layer, and the upper face and the side faces of the ridge to remove parts of the first conductive layer and the third conductive layer using the mask pattern.

5. The method for manufacturing a nitride semiconductor laser element according to claim 1 , wherein

the void is disposed from the ridge base portion to both sides of the ridge.

6. The method for manufacturing a nitride semiconductor laser element according to claim 1 , wherein

the first protective film is formed so that part of the ridge side faces is exposed; and

the void is disposed from the ridge base portion to both sides of the ridge and in contact with both sides of the ridge.

7. The method for manufacturing a nitride semiconductor laser element according to claim 1 , wherein

the first protective film is formed from a material with a lower refractive index than that of the nitride semiconductor layer.

8. The method for manufacturing a nitride semiconductor laser element according to claim 1 , wherein

the void is disposed substantially parallel to the ridge in the direction of the ridge extended.