Solid-state imaging device
To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area.
1. A solid-state imaging device comprising:
a pixel region in which a plurality of pixels are arranged, each of the pixels including a photoelectric conversion element;
a plurality of amplifying transistors of a first conductivity type arranged in the pixel region, each of the amplifying transistors being arranged correspondingly to one of the pixels, wherein each amplifying transistor includes a gate that receives a charge generated in one of the photoelectric conversion elements;
a common well of a second conductivity type in which source and drain regions of the plurality of amplifying transistors are arranged;
a plurality of semiconductor regions of the second conductivity type arranged in the common well of the second conductivity type within the pixel region; and
a plurality of well contacts arranged in the pixel region, wherein the well contacts are electrically contacted, and supply a reference voltage to the common well, and wherein each of the well contacts is shared by more than one of the pixels.
2. The solid-state imaging device according to claim 1 , wherein each of the pixels has a transfer transistor for transferring the charge from the photoelectric conversion element to a floating diffusion region, and a reset transistor for supplying a reset voltage to the floating diffusion region.
3. The solid-state imaging device according to claim 1 , further comprising
a color filter arranged above the photoelectric conversion element of one of the pixels.
4. The solid-state imaging device according to claim 1 , further comprising
a well wiring connected to at least one of the well contacts and arranged at a predetermined interval in a row direction or a column direction of the pixels.
5. The solid-state imaging device according to claim 1 , wherein the well contacts are further arranged at a periphery of the pixel region of the common well.
6. A solid-state imaging device comprising:
a pixel region in which a plurality of pixels are arranged, each of the pixels including a photoelectric conversion element;
a plurality of amplifying transistors of a first conductivity type arranged in the pixel region, each of the amplifying transistors being arranged correspondingly to one of the pixels, wherein each amplifying transistor includes a gate that receives a charge generated in one of the photoelectric conversion elements;
a common well of a second conductivity type in which source and drain regions of the plurality of amplifying transistors are arranged; and
a plurality of well contacts supplying a reference voltage to the common well,
wherein the plurality of well contacts include well contacts arranged within the pixel region and well contacts arranged at a periphery of the pixel region.
7. The solid-state imaging device according to claim 6 , wherein each of the pixels has a transfer transistor for transferring the charge from the photoelectric conversion element to a floating diffusion region, and a reset transistor for supplying a reset voltage to the floating diffusion region.
8. The solid-state imaging device according to claim 6 , further comprising:
a color filter arranged above the photoelectric conversion element of one of the pixels.
9. The solid-state imaging device according to claim 6 , further comprising:
a well wiring connected to at least one of the well contacts, and arranged at a predetermined interval in a row direction or a column direction of the pixels.
10. The solid-state imaging device according to claim 6 , wherein each of the well contacts is connected to a plurality of semiconductor regions of the second conductivity type arranged in the common well.