Semiconductor device and manufacturing method thereof

1. A manufacturing method of a semiconductor device, comprising the steps of:

forming a first insulating layer over a substrate;

forming an oxide semiconductor layer over the first insulating layer;

forming a second insulating layer over the oxide semiconductor layer;

forming an insulating layer including hydrogen over the second insulating layer; and

after forming the insulating layer including hydrogen, performing a heat treatment so that hydrogen in the insulating layer including hydrogen is supplied to at least the oxide semiconductor layer.

2. The manufacturing method of a semiconductor device, according to claim 1 , wherein the heat treatment is performed at a temperature higher than or equal to 150° C. and lower than or equal to 450° C.

3. The manufacturing method of a semiconductor device, according to claim 1 , wherein the insulating layer including hydrogen is formed by a CVD method using silane and a gas including nitrogen.

4. A manufacturing method of a semiconductor device, comprising the steps of:

forming a first gate electrode layer over a substrate having an insulating surface;

forming a gate insulating layer over the first gate electrode layer;

forming an oxide semiconductor layer over the gate insulating layer;

forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer;

forming an insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer;

forming an insulating layer including hydrogen over the insulating layer; and

after forming the insulating layer including hydrogen, performing a heat treatment so that hydrogen in the insulating layer including hydrogen is supplied to at least the oxide semiconductor layer.

5. The manufacturing method of a semiconductor device, according to claim 4 , further comprising a step of, after forming the insulating layer, forming a second gate electrode layer over the insulating layer and in a region overlapping with the first gate electrode layer.

6. The manufacturing method of a semiconductor device, according to claim 4 , wherein the heat treatment is performed at a temperature higher than or equal to 150° C. and lower than or equal to 450° C.

7. The manufacturing method of a semiconductor device, according to claim 4 , wherein the insulating layer including hydrogen is formed by a CVD method using silane and a gas including nitrogen.

8. A manufacturing method of a semiconductor device, comprising the steps of:

forming a gate electrode layer over a substrate having an insulating surface;

forming a gate insulating layer over the gate electrode layer;

forming an oxide semiconductor layer over the gate insulating layer;

forming an insulating layer functioning as a channel protective layer over part of the oxide semiconductor layer;

forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer and the insulating layer;

forming an insulating layer including hydrogen over the insulating layer, the source electrode layer, and the drain electrode layer; and

after forming the insulating layer including hydrogen, performing a heat treatment so that hydrogen in the insulating layer including hydrogen is supplied to at least the oxide semiconductor layer.

9. The manufacturing method of a semiconductor device, according to claim 8 , wherein the heat treatment is performed at a temperature higher than or equal to 150° C. and lower than or equal to 450° C.

10. The manufacturing method of a semiconductor device, according to claim 8 , wherein the insulating layer including hydrogen is formed by a CVD method using silane and a gas including nitrogen.

11. A manufacturing method of a semiconductor device, comprising the steps of:

forming an oxide semiconductor layer over a substrate having an insulating surface;

forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer;

forming an insulating layer functioning as a gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer;

forming a gate electrode layer over the insulating layer;

forming an insulating layer including hydrogen over the insulating layer and the gate electrode layer; and

after forming the insulating layer including hydrogen, performing a heat treatment so that hydrogen in the insulating layer including hydrogen is supplied to at least the oxide semiconductor layer.

12. The manufacturing method of a semiconductor device, according to claim 11 , wherein the heat treatment is performed at a temperature higher than or equal to 150° C. and lower than or equal to 450° C.

13. The manufacturing method of a semiconductor device, according to claim 11 , wherein the insulating layer including hydrogen is formed by a CVD method using silane and a gas including nitrogen.

14. A manufacturing method of a semiconductor device, comprising the steps of:

forming a first gate electrode layer over a substrate having an insulating surface;

forming a gate insulating layer over the first gate electrode layer;

forming an oxide semiconductor layer over the gate insulating layer;

after forming the oxide semiconductor layer, performing a first heat treatment so that a hydrogen concentration of the oxide semiconductor layer is reduced;

forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer;

forming an insulating layer including oxygen over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer;

after forming the insulating layer including oxygen, performing a second heat treatment so that oxygen is supplied to the oxide semiconductor layer;

forming an insulating layer including hydrogen over the insulating layer including oxygen; and

after forming the insulating layer including hydrogen, performing a third heat treatment so that hydrogen in the insulating layer including hydrogen is supplied to at least the oxide semiconductor layer.

15. The manufacturing method of a semiconductor device, according to claim 14 , further comprising a step of, after forming the insulating layer including oxygen, forming a second gate electrode layer over the insulating layer including oxygen and in a region overlapping with the first gate electrode layer.

16. The manufacturing method of a semiconductor device, according to claim 14 , wherein the insulating layer including hydrogen is formed by a CVD method using silane and a gas including nitrogen.

17. The manufacturing method of a semiconductor device, according to claim 14 ,

wherein the first heat treatment is performed at a temperature higher than or equal to 400° C. and lower than or equal to 750° C.,

wherein the second heat treatment is performed at a temperature higher than or equal to 200° C. and lower than or equal to 450° C., and

wherein the third heat treatment is performed at a temperature higher than or equal to 150° C. and lower than or equal to 450° C.

18. A manufacturing method of a semiconductor device, comprising the steps of:

forming a gate electrode layer over a substrate having an insulating surface;

forming a gate insulating layer over the gate electrode layer;

forming an oxide semiconductor layer over the gate insulating layer;

after forming the oxide semiconductor layer, performing a first heat treatment so that a hydrogen concentration of the oxide semiconductor layer is reduced;

forming an insulating layer including oxygen functioning as a channel protective layer over part of the oxide semiconductor layer;

after forming the insulating layer including oxygen, performing a second heat treatment so that oxygen is supplied to the oxide semiconductor layer;

forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer and the insulating layer including oxygen;

forming an insulating layer including hydrogen over the insulating layer including oxygen, the source electrode layer, and the drain electrode layer; and

after forming the insulating layer including hydrogen, performing a third heat treatment so that hydrogen in the insulating layer including hydrogen is supplied to at least the oxide semiconductor layer.

19. The manufacturing method of a semiconductor device, according to claim 18 , wherein the insulating layer including hydrogen is formed by a CVD method using silane and a gas including nitrogen.

20. The manufacturing method of a semiconductor device, according to claim 18 ,

wherein the first heat treatment is performed at a temperature higher than or equal to 400° C. and lower than or equal to 750° C.,

wherein the second heat treatment is performed at a temperature higher than or equal to 200° C. and lower than or equal to 450° C., and

wherein the third heat treatment is performed at a temperature higher than or equal to 150° C. and lower than or equal to 450° C.

21. A manufacturing method of a semiconductor device, comprising the steps of:

forming an oxide semiconductor layer over a substrate having an insulating surface;

after forming the oxide semiconductor layer, performing a first heat treatment so that a hydrogen concentration of the oxide semiconductor layer is reduced;

forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer;

forming an insulating layer including oxygen functioning as a gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer;

after forming the insulating layer including oxygen, performing a second heat treatment so that oxygen is supplied to the oxide semiconductor layer;

forming a gate electrode layer over the insulating layer including oxygen;

forming an insulating layer including hydrogen over the insulating layer including oxygen and the gate electrode layer; and

after forming the insulating layer including hydrogen, performing a third heat treatment so that hydrogen in the insulating layer including hydrogen is supplied to at least the oxide semiconductor layer.

22. The manufacturing method of a semiconductor device, according to claim 21 ,

wherein the first heat treatment is performed at a temperature higher than or equal to 400° C. and lower than or equal to 750° C.,

wherein the second heat treatment is performed at a temperature higher than or equal to 200° C. and lower than or equal to 450° C., and

wherein the third heat treatment is performed at a temperature higher than or equal to 150° C. and lower than or equal to 450° C.

23. The manufacturing method of a semiconductor device, according to claim 21 , wherein the insulating layer including hydrogen is formed by a CVD method using silane and a gas including nitrogen.