Silicon carbide semiconductor device and method of manufacturing the same
A silicon carbide semiconductor device having an active layer with reduced defect density which is formed on a substrate made of silicon carbide, and a method of manufacturing the same are provided. A semiconductor device includes a substrate made of silicon carbide and having an off angle of not less than 50° and not more than 65° with respect to a plane orientation {0001}; a buffer layer, and an epitaxial layer, a p-type layer and an n + region each serving as an active layer. The buffer layer is made of silicon carbide and formed on the substrate. The active layer is made of silicon carbide and formed on the buffer layer. The micropipe density is lower in the active layer than in the substrate. The density of dislocations in which the direction of a Burgers vector corresponds to is higher in the active layer than in the substrate. On the film forming conditions in the step of forming the buffer layer, the composition and the flow rate of the material gas is determined such that the value of the C/Si ratio representing a ratio of carbon atoms to silicon atoms in the material gas used for forming the buffer layer is smaller than the value of the C/Si ratio in the step of forming the active layer.
1. A silicon carbide semiconductor device comprising:
a substrate made of silicon carbide and having an off angle of not less than 50° and not more than 65° with respect to a plane orientation {0001};
a buffer layer made of silicon carbide and formed on said substrate; and
an active layer made of silicon carbide and formed on said buffer layer, and
a micropipe density being lower in said active layer than in said substrate, and
a density of dislocations in which a direction of a Burgers vector corresponds to [0001] being higher in said active layer than in said substrate;
wherein a density of basal plane dislocations in which a direction of a Burgers vector corresponds to [11-20] and a direction of a dislocation line substantially corresponds to [11-20] is lower in said active layer than in said substrate, and a density of edge dislocations in which a direction of a Burgers vector corresponds to [11-20] and a direction of a dislocation line substantially corresponds to [0001] is higher in said active layer than in said substrate.
2. The silicon carbide semiconductor device according to claim 1 , wherein the micropipe density in said active layer is not more than 1 cm −2 .
3. The silicon carbide semiconductor device according to claim 1 , wherein an off orientation of said substrate falls within a range of ±5° in a <11-20> direction.
4. The silicon carbide semiconductor device according to claim 1 , wherein an off orientation of said substrate falls within a range of ±5° in a <01-10> direction.
5. The silicon carbide semiconductor device according to claim 4 , wherein a plane orientation of a main surface of said substrate has an off angle of not less than −3° and not more than +5° with respect to a plane orientation {03-38}.
6. The silicon carbide semiconductor device according to claim 1 , wherein
said substrate is higher in impurity concentration than said buffer layer, and
said buffer layer is higher in impurity concentration than said active layer.
7. A method of manufacturing a silicon carbide semiconductor device, comprising:
a step of preparing a substrate made of silicon carbide and having an off angle of not less than 50° and not more than 65° with respect to a plane orientation {0001};
a step of forming a buffer layer made of silicon carbide on said substrate; and
a step of forming an active layer on said buffer layer, and
in said step of forming said buffer layer, said buffer layer being formed on film forming conditions that a micropipe density is lower in said buffer layer than in said substrate, and a density of dislocations in which a direction of a Burgers vector corresponds to [0001] is higher in said buffer layer than in said substrate;
wherein, in said step of forming said buffer layer, said buffer layer is formed on film forming conditions that a density of basal plane dislocations in which a direction of a Burgers vector corresponds to [11-20] and a direction of a dislocation line substantially corresponds to [11-20] is lower in said active layer than in said substrate, and a density of edge dislocations in which a direction of a Burgers vector corresponds to [11-20] and a direction of a dislocation line substantially corresponds to [0001] is higher in said active layer than in said substrate.
8. The method of manufacturing a silicon carbide semiconductor device according to claim 7 , wherein, on said film forming conditions in said step of forming said buffer layer, a composition and a flow rate of a material gas is determined such that a value of a C/Si ratio representing a ratio of carbon atoms to silicon atoms in the material gas used for forming said buffer layer is smaller than the value of said C/Si ratio in said step of forming said active layer.