IP Library Granted Patent US 8,421,313
Granted Patent B2
US 8,421,313 · App. 13/357,291 · Granted Apr 16, 2013

Energy harvesting device

Inventors: Wei-Heng Shih (Bryn Mawr, PA); Wan Y. Shih (Bryn Mawr, PA); Hakki Yegingil (Philadelphia, PA)
Assignee: Drexel University
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,421,313
App. No.
13/357,291
Granted
Apr 16, 2013
Kind
B2
Abstract

A piezoelectric energy harvesting device (PEHD) comprising a driving element, conducting element, piezoelectric layer and non-piezoelectric layer capable of converting ambient mechanical energy into electrical energy. The piezoelectric layer may be constructed from PMN-PT or PZT having a thickness of about 1-150 μm. The PEHD may be used to generate about 1 W. The harvested energy may be stored and used to power microelectronic devices and rechargeable battery technologies.

Claims (32)

1. A piezoelectric energy harvesting system comprising:

a cantilever, wherein the cantilever comprises

a conducting element,

at least a first piezoelectric layer constructed from a freestanding piezoelectric film and

a non-piezoelectric layer bound to said at least a first piezoelectric layer,

wherein said piezoelectric layer has a thickness of about 1 μm-about 150 μm, and

an electrical connection to a device which stores or uses energy harvested by the piezoelectric energy harvesting system.

2. The system of claim 1 , wherein said piezoelectric layer and non-piezoelectric layer have different lengths.

3. The system of claim 1 , wherein said piezoelectric layer has a thickness of about 8 μm-about 127 μm.

4. The system of claim 1 , wherein said piezoelectric layer is selected from the group consisting of PZT and PMN-PT.

5. The system of claim 1 , wherein said first piezoelectric layer has a different length from the non-piezoelectric layer.

6. The system of claim 1 , wherein a ratio of a thickness of the piezoelectric layer to a thickness of the non-piezoelectric layer is from about 0.04 to about 12.5.

7. The system of claim 1 , wherein the freestanding piezoelectric film is made by a tape casting method.

8. The system of claim 1 , wherein the freestanding film has a piezoelectric coefficient −d 31 of at least about 2000 pm/V at E=about 10 kV/cm.

9. The system of claim 8 , wherein the dielectric constant of the freestanding film decreases with increasing electric field.

10. The system of claim 9 , wherein the freestanding film has a strain of at least 0.3% measured under an applied electric field of from about 8 kV/cm to about 12 kV/cm.

11. The system of claim 9 , wherein the freestanding film is unpoled and has a strain of at least 3% measured at an applied electric field of about 10 kV/cm.

12. The system of claim 1 , comprising a plurality of cantilevers to form an array, and wherein each said cantilever is electrically connected to a device for storing or using electrical energy.

13. A method harvesting energy harvesting comprising the steps of:

a. exposing a piezoelectric cantilever system comprising

at least one piezoelectric cantilever including a driving element,

at least a first piezoelectric layer having a thickness of about 1 μm-about 150 μm, wherein the first piezoelectric layer is constructed from a freestanding piezoelectric film,

a conductive element, and

a non-piezoelectric layer,

to a mechanical or vibrational force,

b. harvesting electrical energy generated by conversion of said mechanical or vibrational energy into electrical energy, and

c. transporting the harvested electrical energy to a device which is capable of consuming or storing the harvested electrical energy.

14. The method of claim 13 , wherein the harvested electrical energy is stored in the device.

15. The system of claim 1 , wherein the freestanding film has a piezoelectric coefficient −g 31 of at least about 0.137 V/m/N at an applied electric field of about 10 kV/cm.

16. The system of claim 1 , wherein a ratio of a thickness of the piezoelectric layer to a thickness of the non-piezoelectric layer is from about 0.05 to about 6.25.

17. The method of claim 13 , wherein in said exposing step the piezoelectric cantilever is exposed to one of: a force of nature, human motion and machinery.

18. The method of claim 13 , wherein the piezoelectric cantilever is operated at a resonance frequency of the first piezoelectric layer.

Assignments (1)
SECURITY INTEREST Recorded Nov 3, 2021
From: TBT GROUP, INC.
To: THE ENPEX CORPORATION
Reel/Frame 058012/0503 →
Continuity (3)
Continuation 12523969
Provisional Application 60887051 · Jan 29, 2007
Related Publication 20120119625A1 · May 17, 2012