Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrate

1. A method for obtaining high-quality boundaries for individual multilayer structures which are fabricated on a trench-partitioned substrate, comprising:

receiving a trench-partitioned substrate wherein the substrate surface is partitioned into arrays of isolated deposition platforms which are separated by arrays of trenches;

forming a multilayer structure, which comprises a first doped layer, an active layer, and a second doped layer, on one of the deposition platforms; and

removing sidewalls of the multilayer structure, wherein removing the sidewalls of the multilayer structure involves an etching process, wherein the etching process is performed from the underside of the multiple structures, and wherein the method further comprises:

bonding a supporting structure to the topside of the multiple structures;

removing the trench-partitioned substrate to expose the underside of the multiple structures, wherein the multilayer structures are attached to the supporting structure;

patterning the underside of the multiple structures to expose undesirable boundary regions of the multiple structures; and

removing the sidewalls of the multiple structures corresponding to the undesirable boundary region.

2. The method of claim 1 , wherein the etching process includes at least one of the following process:

a dry etching process;

a wet etching process; and

a combined dry etching and wet etching process.

3. The method of claim 2 , wherein prior to etching the sidewalls, the method further comprises protecting non-boundary surface of the multilayer structure with a mask layer, thereby only exposing the boundary region of the multilayer structure to the subsequent etching process.

4. The method of claim 3 , wherein the exposed boundary width is between 2 μm and 50 μm.

5. The method of claim 2 , wherein if a dry etching process is used, the method further comprises controlling the dry etching process to at least etch through the active layer of the multilayer structure, wherein the dry etching process is directed perpendicular to the multilayer structure.

6. The method of claim 2 , wherein the dry etching process is an inductively coupled plasma (ICP) etching.

7. The method of claim 2 , wherein the wet etching process involves using a H 3 PO 4 based etchant.

8. The method of claim 7 , wherein the method comprises heating the H 3 PO 4 based etchant to a temperature greater than 100° C.

9. The method of claim 1 , wherein removing the sidewalls of the multiple structures involves using a H 3 PO 4 based etchant to wet-etch the sidewalls.

10. The method of claim 9 , wherein the method comprises heating the H 3 PO 4 based etchant to a temperature greater than 100° C.