Semiconductor grain and oxide layer for photovoltaic cells
View Patent ↗Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer is disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited.
1. A photovoltaic cell, comprising:
one or more overlying electron-conducting layers each comprising one or more electron-conducting materials;
one or more overlying hole-conducting layers each comprising one or more hole-conducting materials;
one or more overlying photoactive conversion layers, each of the overlying photoactive conversion layers being disposed between the one or more overlying electron-conducting layers and the one or more overlying hole-conducting layers, each of the photoactive conversion layers comprising one or more distinct overlying semiconductor and oxide layers, each semiconductor and oxide layer comprising a multiplicity of semiconductor grains arranged in a distinct oxide matrix, wherein each of the semiconductor grains is substantially columnar, wherein each of the semiconductor grains has a height substantially equal to that of a thickness of the respective distinct semiconductor and oxide layer, wherein the oxide matrix is dispersed at least at circumferential grain boundaries of the semiconductor grains; and wherein each of one or more of the overlying photoactive conversion layers comprises:
one or more overlying n-type semiconductor and oxide layers, each n-type semiconductor and oxide layer comprising a multiplicity of n-type semiconductor grains arranged in an oxide matrix, wherein each of the n-type semiconductor grains is substantially columnar, wherein each of the n-type semiconductor grains has a height substantially equal to that of a thickness of the respective n-type semiconductor and oxide layer, and wherein the oxide matrix is dispersed at least at circumferential grain boundaries of the n-type semiconductor grains; and/or
one or more overlying p-type semiconductor and oxide layers, each p-type semiconductor and oxide layer comprising a multiplicity of p-type semiconductor grains arranged in an oxide matrix, wherein each of the p-type semiconductor grains is substantially columnar, wherein each of the p-type semiconductor grains has a height substantially equal to that of a thickness of the respective p-type semiconductor and oxide layer, and wherein the oxide matrix is dispersed at least at circumferential grain boundaries of the p-type semiconductor grains;
a substrate, wherein:
the one or more overlying electron-conducting layers are deposited over the substrate, the one or more photoactive conversion layers are deposited over the one or more overlying electron-conducting layers, and the one or more overlying hole-conducting layers are deposited over the one or more photoactive conversion layers; or
the one or more overlying hole-conducting layers are deposited over the substrate, the one or more photoactive conversion layers are deposited over the one or more overlying hole-conducting layers, and the one or more overlying electron-conducting layers are deposited over the one or more photoactive conversion layers;
one or more electrically conducting interlayers that promote vertical columnar growth of semiconductor grains from an adjacent semiconductor and oxide layer respectively during deposition of the adjacent layers;
one or more metal and oxide layers, each of the one or more metal and oxide layers being disposed between the one or more overlying electron-conducting layers and the one or more overlying hole-conducting layers, each of the metal and oxide layers comprising a multiplicity of metallic grains arranged in an oxide matrix, wherein each of the metallic grains is substantially columnar, wherein each of the metallic grains has a height substantially equal to that of a thickness of the respective metal and oxide layer, and wherein the oxide matrix is dispersed at least at circumferential grain boundaries of the metallic grains and wherein one or more of the metal and oxide layers are disposed between:
the one or more overlying n-type semiconductor and oxide layers and the one or more overlying p-type semiconductor and oxide layers within a respective photoactive conversion layer;
adjacent photoactive conversion layers of the one or more photoactive conversion layers; the one or more overlying electron-conducting layers and the one of the one or more photoactive conversion layers most closely disposed in proximity to the one or more overlying electron-conducting layers; and/or
the one or more overlying hole-conducting layers and the one of the one or more photoactive conversion layers most closely disposed in proximity to the one or more overlying hole-conducting layers.
2. The photovoltaic cell of claim 1 , wherein each of substantially most or all of the metallic semiconductor grains in one or more of the metal and oxide layers is in contact on one end with a p-type semiconductor grain from an adjacent p-type semiconductor and oxide layer.
3. The photovoltaic cell of claim 1 , wherein each of substantially most or all of the metallic semiconductor grains in one or more of the metal and oxide layers is in contact on one end with an n-type semiconductor grain from an adjacent n-type semiconductor and oxide layer.
4. A photovoltaic cell, comprising:
one or more overlying electron-conducting layers each comprising one or more electron-conducting materials;
one or more overlying hole-conducting layers each comprising one or more hole-conducting materials;
one or more overlying photoactive conversion layers, each of the overlying photoactive conversion layers being disposed between the one or more overlying electron-conducting layers and the one or more overlying hole-conducting layers, each of the photoactive conversion layers comprising one or more distinct overlying semiconductor and oxide layers, each semiconductor and oxide layer comprising a multiplicity of semiconductor grains arranged in a distinct oxide matrix, wherein each of the semiconductor grains is substantially columnar, wherein each of the semiconductor grains has a height substantially equal to that of a thickness of the respective distinct semiconductor and oxide layer, wherein the oxide matrix is dispersed at least at circumferential grain boundaries of the semiconductor grains; and wherein each of one or more of the overlying photoactive conversion layers comprises:
one or more overlying n-type semiconductor and oxide layers, each n-type semiconductor and oxide layer comprising a multiplicity of n-type semiconductor grains arranged in an oxide matrix, wherein each of the n-type semiconductor grains is substantially columnar, wherein each of the n-type semiconductor grains has a height substantially equal to that of a thickness of the respective n-type semiconductor and oxide layer, and wherein the oxide matrix is dispersed at least at circumferential grain boundaries of the n-type semiconductor grains; and/or
one or more overlying p-type semiconductor and oxide layers, each p-type semiconductor and oxide layer comprising a multiplicity of p-type semiconductor grains arranged in an oxide matrix, wherein each of the p-type semiconductor grains is substantially columnar along an axis perpendicular to an inter-layer planar surface of the p-type semiconductor and oxide layer, wherein each of the p-type semiconductor grains has a height equal to that of a thickness of the respective p-type semiconductor and oxide layer, and wherein the oxide matrix is dispersed at least at circumferential grain boundaries of the p-type semiconductor grains;
wherein there are a plurality of n-type semiconductor and oxide layers in each of one or more of the photoactive conversion layers, and wherein each of substantially most or all of the n-type semiconductor grains in one of the n-type semiconductor and oxide layers in a respective photoactive conversion layer is positioned over a corresponding n-type semiconductor grain in an immediately adjacent one of the n-type semiconductor and oxide layers in the respective photoactive conversion layer;
a substrate, wherein:
the one or more overlying electron-conducting layers are deposited over the substrate, the one or more photoactive conversion layers are deposited over the one or more overlying electron-conducting layers, and the one or more overlying hole-conducting layers are deposited over the one or more photoactive conversion layers; or
the one or more overlying hole-conducting layers are deposited over the substrate, the one or more photoactive conversion layers are deposited over the one or more overlying hole-conducting layers, and the one or more overlying electron-conducting layers are deposited over the one or more photoactive conversion layers; and
one or more electrically conducting interlayers that promote vertical columnar growth of semiconductor grains from an adjacent semiconductor and oxide layer respectively during deposition of the adjacent layers.
5. A photovoltaic cell, comprising:
one or more overlying electron-conducting layers each comprising one or more electron-conducting materials;
one or more overlying hole-conducting layers each comprising one or more hole-conducting materials;
one or more overlying photoactive conversion layers, each of the overlying photoactive conversion layers being disposed between the one or more overlying electron-conducting layers and the one or more overlying hole-conducting layers, each of the photoactive conversion layers comprising one or more distinct overlying semiconductor and oxide layers, each semiconductor and oxide layer comprising a multiplicity of semiconductor grains arranged in a distinct oxide matrix, wherein each of the semiconductor grains is substantially columnar, wherein each of the semiconductor grains has a height substantially equal to that of a thickness of the respective distinct semiconductor and oxide layer, wherein the oxide matrix is dispersed at least at circumferential grain boundaries of the semiconductor grains; and wherein each of one or more of the overlying photoactive conversion layers comprises:
one or more overlying n-type semiconductor and oxide layers, each n-type semiconductor and oxide layer comprising a multiplicity of n-type semiconductor grains arranged in an oxide matrix, wherein each of the n-type semiconductor grains is substantially columnar, wherein each of the n-type semiconductor grains has a height substantially equal to that of a thickness of the respective n-type semiconductor and oxide layer, and wherein the oxide matrix is dispersed at least at circumferential grain boundaries of the n-type semiconductor grains; and/or
one or more overlying p-type semiconductor and oxide layers, each p-type semiconductor and oxide layer comprising a multiplicity of p-type semiconductor grains arranged in an oxide matrix, wherein each of the p-type semiconductor grains is substantially columnar, wherein each of the p-type semiconductor grains has a height substantially equal to that of a thickness of the respective p-type semiconductor and oxide layer, and wherein the oxide matrix is dispersed at least at circumferential grain boundaries of the p-type semiconductor grains;
wherein there are a plurality of p-type semiconductor and oxide layers in each of one or more of the photoactive conversion layers, and wherein each of substantially most or all of the p-type semiconductor grains in one of the p-type semiconductor and oxide layers in a respective photoactive conversion layer is positioned over a corresponding p-type semiconductor grain in an immediately adjacent one of the p-type semiconductor and oxide layers in the respective photoactive conversion layer;
a substrate, wherein:
the one or more overlying electron-conducting layers are deposited over the substrate, the one or more photoactive conversion layers are deposited over the one or more overlying electron-conducting layers, and the one or more overlying hole-conducting layers are deposited over the one or more photoactive conversion layers; or
the one or more overlying hole-conducting layers are deposited over the substrate, the one or more photoactive conversion layers are deposited over the one or more overlying hole-conducting layers, and the one or more overlying electron-conducting layers are deposited over the one or more photoactive conversion layers; and
one or more electrically conducting interlayers that promote vertical columnar growth of semiconductor grains from an adjacent semiconductor and oxide layer respectively during deposition of the adjacent layers.