IP Library › Granted Patent US 8,432,227
Granted Patent B2
US 8,432,227 · App. 13/301,955 · Granted Apr 30, 2013

Power amplifier

Inventors: Atsushi Okamura (Tokyo, JP); Kazuya Yamamoto (Tokyo, JP); Takayuki Matsuzuka (Tokyo, JP)
Assignee: Mitsubishi Electric Corporation
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Quick Facts
Patent No.
US 8,432,227
App. No.
13/301,955
Granted
Apr 30, 2013
Kind
B2
Abstract

A power amplifier includes: an amplifying element having a base into which input signals are inputted, a collector to which a collector voltage is applied, and an emitter; and a bias circuit supplying a bias current to the base of the amplifying element. The bias circuit includes a bias current lowering circuit which lowers the bias current when the collector voltage is lower than a prescribed threshold value.

Claims (14)

1. A power amplifier comprising:

an amplifying element having a base into which input signals are input, a collector to which a collector voltage is applied, and an emitter; and

a bias circuit supplying a bias current to the base of the amplifying element, wherein the bias circuit includes

a bias transistor having a control terminal into which a reference voltage is input, a first terminal into which a power voltage is input, and a second terminal connected to the base of the amplifying element,

a first resistor connected to the second terminal of the bias transistor,

a second resistor connected between the first resistor and a grounding point, and

a bias current lowering circuit which lowers the bias current when the collector voltage is lower than a first prescribed threshold value and which includes

a transistor having a control terminal, a first terminal connected between the first resistor and the second resistor, and a second terminal that is grounded, and

a control circuit supplying a control voltage to the control terminal of the transistor.

2. The power amplifier according to claim 1 , wherein the control circuit turns the transistor ON when the collector voltage is lower than the first prescribed threshold value.

3. The power amplifier according to claim 1 , further comprising a power voltage lowering circuit which lowers the power voltage when the collector voltage is lowered, wherein the control circuit turns the transistor ON when the power voltage is lower than a second prescribed threshold value.

4. The power amplifier according to claim 1 , further comprising a reference voltage lowering circuit which lowers the reference voltage when the collector voltage is lowered, wherein the control circuit turns the transistor ON when the reference voltage is lower than a second prescribed threshold value.

5. The power amplifier according to claim 1 , wherein the second resistor has positive temperature characteristics of at least 10%.

6. The power amplifier according to claim 1 , wherein the bias current lowering circuit includes a plurality of bias current lowering circuits which lower respective bias currents when the collector voltage is lower than a plurality of threshold values that are different from each other.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 4, 2017
From: MITSUBISHI ELECTRIC CORPORATION
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 040839/0688 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 13, 2012
From: OKAMURA, ATSUSHI; YAMAMOTO, KAZUYA; MATSUZUKA, TAKAYUKI
To: MITSUBISHI ELECTRIC CORPORATION
Reel/Frame 027690/0666 →
Priority Claims (1)
JP 2011-121491 · May 31, 2011 · national
Continuity (1)
Related Publication 20120306579A1 · Dec 6, 2012