Method and system for photolithographic fabrication with resolution far below the diffraction limit
A method and system for photolithography is provided. The system includes a photoresist comprising a photoinitiator and a prepolymer resin. The system further includes a first light source operable to generate at least a first beam of light which is focused on a first area of the photoresist. The first beam of light is configured to excite the photoinitiator. The system further includes a second light source operable to generate at least a second beam of light which is focused on a second area of the photoresist, the second beam of light configured to deactivate at least temporarily the photoinitiator excited by the first beam of light. The first area and second area overlap at least partially. A time difference of at least 10 ns exists between the photoinitiator being excited by the first beam of light and the photoinitiator initiating polymerization.
1. A photolithography system, the system comprising:
a photoresist comprising a photoinitiator and a prepolymer resin;
a first light source operable to generate at least a first beam of light which is focused on a first area of the photoresist, the first beam of light configured to excite the photoinitiator; and
a second light source operable to generate at least a second beam of light which is focused on a second area of the photoresist, the second beam of light configured to deactivate at least temporarily the photoinitiator excited by the first beam of light,
wherein the first area and second area overlap at least partially,
wherein a time difference of at least 10 ns exists between the photoinitiator being excited by the first beam of light and the photoinitiator initiating polymerization.
2. The system according to claim 1 , wherein the photoinitiator is selected from a group consisting of Malachite green carbinol base, Malachite green carbinol base hydrochloride, Malachite green oxalate, Malachite green hydrogen sulfate, Malachite green acetate, and Malachite green benzoate.
3. The system according to claim 1 , wherein the photoinitiator is excited by the first beam of light by one of single photon absorption and two photon absorption.
4. The system according to claim 1 , wherein the photoresist is one of a positive tone and a negative tone photoresist.
5. The system according to claim 1 , wherein the photoinitiator has a fluorescence quantum yield less than 0.1 and has an extinction coefficient greater than 50,000/M-cm.
6. The system according to claim 1 , further comprising a phase mask configured for phase shaping the second beam of light prior to the second beam of light deactivating the photoinitiator.
7. The system according to claim 1 , wherein the first and second sources of light are laser sources generating the first and second beams of light.
8. The system according to claim 7 , wherein the first light source is operating in pulsed mode and the second light source is operating in continuous wave mode.
9. The system according to claim 7 , wherein the first light source and the second light source are operating in pulsed mode.
10. The system according to claim 7 , wherein the first light source and the second light source are operating in continuous wave mode.
11. The system according to claim 1 , wherein the wavelength of the first and second beam of light is between 700 nm and 900 nm.
12. The system according to claim 1 , wherein the wavelength of the first and second beam of light is between 350 nm and 450 nm.
13. The system according to claim 7 , wherein the first and second sources of light correspond to a single light source.
14. The system according to claim 7 , wherein the first light source is operating in continuous wave mode and the second light source is operating in pulsed mode.
15. The system according to claim 1 , wherein the time difference of at least 10 ns is an average time difference.