Chemical-mechanical planarization pad including patterned structural domains
An aspect of the present disclosure relates to a chemical mechanical planarization pad including a first domain and a second continuous domain wherein the first domain includes discrete elements regularly spaced within the second continuous domain. The pad may be formed by forming a plurality of openings for a first domain within a second continuous domain of the pad, wherein the openings are regularly spaced within the second domain, and forming the first domain within the plurality of openings in second continuous domain. In addition, the pad may be used in polishing a substrate with a polishing slurry.
1. A chemical mechanical planarization pad, comprising:
a first domain comprising a plurality of first discrete elements, each of said plurality of first discrete elements comprising a first material; and
a second domain comprising a second material; wherein:
said second domain is continuous around each of said plurality of first discrete elements;
said second domain comprises water soluble fibrous material; and
said plurality of first discrete elements are disposed and regularly spaced within said second domain.
2. The chemical mechanical planarization pad of claim 1 , wherein said first domain exhibits a first hardness H 1 and said second domain exhibits a second hardness H 2 , wherein H 1 >H 2 .
3. The chemical mechanical planarization pad of claim 2 , wherein H 1 is in the range of 80 to 150 Rockwell R and H 2 is in the range of 40 to 110 Rockwell R.
4. The chemical mechanical planarization pad of claim 1 , further comprising at least one additional domain including a plurality of second discrete element, wherein said plurality of second discrete elements are disposed and regularly spaced within said second continuous domain.
5. The chemical mechanical planarization pad of claim 1 , wherein said first domain exhibits a first specific gravity SG 1 and said second domain exhibits a second specific gravity SG 2 , wherein SG 1 does not equal SG 2 .
6. The chemical mechanical planarization pad of claim 1 , wherein SG 1 is in the range of 1.0 to 2.0 and SG 2 is in the range of 0.75 to 1.5.
7. The chemical mechanical planarization pad of claim 1 , wherein said plurality of first discrete elements are regularly spaced longitudinally and laterally across a surface of the pad.
8. The chemical mechanical planarization pad of claim 1 , wherein said plurality of discrete elements are regularly spaced around an axis.
9. The chemical mechanical planarization pad of claim 1 , wherein said water soluble fibrous material comprises a fabric.
10. The chemical mechanical planarization pad of claim 6 , wherein said second domain further comprises polymeric material.
11. The chemical mechanical planarization pad of claim 1 , further comprising voids present in said second continuous domain.
12. The chemical mechanical planarization pad of claim 1 , wherein said voids have a largest linear dimension in the range of 10 nanometers to 200 micrometers.
13. The chemical mechanical planarization pad of claim 1 , wherein said plurality of first discrete elements extend through a portion of a thickness of said pad.
14. The chemical mechanical planarization pad of claim 1 , wherein said second domain comprises a plurality of recesses, and at least one of said plurality of first discrete elements is positioned within each of said recesses.